We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
BSC030N03LSGATMA1 DISTI # V72:2272_06384550 | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant | 3707 |
|
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 309In Stock |
|
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 309In Stock |
|
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
BSC030N03LSGATMA1 DISTI # 31273903 | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant | 3707 |
|
BSC030N03LS G DISTI # BSC030N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 15000 |
|
BSC030N03LSGXT/IBM DISTI # BSC030N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 30000 |
|
BSC030N03LSGATMA1 DISTI # 60R2485 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 4606 |
|
BSC030N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 264 |
|
BSC030N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 500 |
|
BSC030N03LSGATMA1 DISTI # 726-BSC030N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 4892 |
|
BSC030N03LS G DISTI # 726-BSC030N03LS-G | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 4848 |
|
BSC030N03LSG | Infineon Technologies AG | 23 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET | 41 |
|
BSC030N03LSGATMA1 DISTI # 8259112P | Infineon Technologies AG | MOSFET N-CH 23A 30V OPTIMOS3 TDSON8EP, RL | 1700 |
|
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,98A,69W,PG-TDSON-8 | 2739 |
|
BSC030N03LSG | Infineon Technologies AG | 587 | ||
BSC030N03LSG | Infineon Technologies AG | INSTOCK | 106 | |
BSC030N03LSGATMA1 DISTI # C1S322000606399 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 3707 |
|
BSC030N03LS G DISTI # C1S322000084302 | Infineon Technologies AG | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant | 45 |
|
BSC030N03LSGATMA1 DISTI # 1775436 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 4606 |
|
BSC030N03LSG | Infineon Technologies AG | 30V,100A,N Channel Power MOSFET | 500 |
|
BSC030N03LSGATMA1 DISTI # 1775436 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 4606 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: BSC030N03MS G OMO.#: OMO-BSC030N03MS-G |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | |
Mfr.#: BSC030N03LS G OMO.#: OMO-BSC030N03LS-G-1190 |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G) | |
Mfr.#: BSC030N03MSG OMO.#: OMO-BSC030N03MSG-1190 |
New and Original | |
Mfr.#: BSC031N06NS3G OMO.#: OMO-BSC031N06NS3G-1190 |
Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC032N04LSATMA1 |
MOSFET N-CH 40V 21A 8TDSON | |
Mfr.#: BSC034N03LSG OMO.#: OMO-BSC034N03LSG-1190 |
New and Original | |
Mfr.#: BSC037N025S G |
MOSFET N-CH 25V 100A TDSON-8 | |
Mfr.#: BSC034N06NSATMA1 |
MOSFET N-CH 60V 100A 8TDSON | |
Mfr.#: BSC035N04LSGATMA1 |
MOSFET N-CH 40V 100A TDSON-8 | |
Mfr.#: BSC036NE7NS3GATMA1 |
MOSFET N-Ch 75V 100A TDSON-8 |