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FCP650N80Z

FCP650N80Z
Mfr. #:
FCP650N80Z
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 800V 10A NChn MOSFET SuperFET II
Lifecycle:
New from this manufacturer.
Datasheet:
FCP650N80Z Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FCP650N80Z more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
650 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V, 30 V
Qg - Gate Charge:
27 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
162 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperFET II
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FCP650N80Z
Transistor Type:
1 N-Channel
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
7.8 S
Fall Time:
3.4 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
17 ns
Unit Weight:
0.063493 oz
Tags
FCP6, FCP
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220
***et
SuperFET2 800V 650mOhm Zener embedded, TO220 PKG
***ical
Trans MOSFET N-CH 800V 10A Tube
***i-Key
SUPERFET2 800V 650MOHM ZENER
***ark
MOSFET, N-CH, 800V, 10A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 10A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:162W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 800V, 10A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.53ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:162W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Part # Mfg. Description Stock Price
FCP650N80Z
DISTI # V99:2348_16116295		ON SemiconductorSUPERFET2 800V 650MOHM ZENER E765
  • 2500:$0.9005
  • 1000:$0.9457
  • 500:$1.1369
  • 100:$1.2951
  • 10:$1.6202
  • 1:$2.0951
FCP650N80Z
DISTI # V36:1790_16116295		ON SemiconductorSUPERFET2 800V 650MOHM ZENER E0
  • 800000:$0.7616
  • 400000:$0.7650
  • 80000:$1.1270
  • 8000:$1.8050
  • 800:$1.9200
FCP650N80Z
DISTI # FCP650N80Z-ND		ON SemiconductorMOSFET N-CH 800V 10A
RoHS: Compliant
Min Qty: 1
Container: Tube		699In Stock
  • 5600:$0.8924
  • 3200:$0.9268
  • 800:$1.2014
  • 100:$1.4622
  • 25:$1.7164
  • 10:$1.8190
  • 1:$2.0300
FCP650N80Z
DISTI # 25895793		ON SemiconductorSUPERFET2 800V 650MOHM ZENER E765
  • 7:$2.0951
FCP650N80Z
DISTI # FCP650N80Z		ON SemiconductorSuperFET2 800V 650mOhm Zener embedded, TO220 PKG (Alt: FCP650N80Z)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8119
  • 500:€0.8419
  • 100:€0.8739
  • 50:€0.9089
  • 25:€0.9469
  • 10:€1.0329
  • 1:€1.1369
FCP650N80Z
DISTI # FCP650N80Z		ON SemiconductorSuperFET2 800V 650mOhm Zener embedded, TO220 PKG - Rail/Tube (Alt: FCP650N80Z)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.8069
  • 4800:$0.8269
  • 3200:$0.8379
  • 1600:$0.8489
  • 800:$0.8539
FCP650N80Z
DISTI # 512-FCP650N80Z		ON SemiconductorMOSFET 800V 10A NChn MOSFET SuperFET II
RoHS: Compliant		1414
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9470
  • 2500:$0.8820
  • 5000:$0.8490
FCP650N80Z
DISTI # 2565209		ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-220-3
RoHS: Compliant		676
  • 1600:$1.6100
  • 800:$1.7400
  • 100:$2.4800
  • 10:$3.0900
  • 1:$3.4100
FCP650N80Z
DISTI # 2565209		ON SemiconductorMOSFET, N-CH, 800V, 10A, TO-220-3676
  • 500:£0.7830
  • 250:£0.8400
  • 100:£0.8960
  • 10:£1.1400
  • 1:£1.6700
Image Part # Description
BD437TG

Mfr.#: BD437TG

OMO.#: OMO-BD437TG

 Bipolar Transistors - BJT 4A 45V 36W NPN
BD676G

Mfr.#: BD676G

OMO.#: OMO-BD676G

 Darlington Transistors 4A 45V 40W PNP
74437429203680

Mfr.#: 74437429203680

OMO.#: OMO-74437429203680

 Fixed Inductors WE-HCF 2920 68uH 20% 11.2A 22.2mOhm
VR37000002004FA100

Mfr.#: VR37000002004FA100

OMO.#: OMO-VR37000002004FA100

 Metal Film Resistors - Through Hole 1/2Watt 2Mohms 1% VR37
FG16C0G1H104JNT06

Mfr.#: FG16C0G1H104JNT06

OMO.#: OMO-FG16C0G1H104JNT06

 Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 0.1uF C0G 5% LS:2.5mm
860020773013

Mfr.#: 860020773013

OMO.#: OMO-860020773013

 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG5 63V 47uF 20% ESR=1151mOhms
74437529203680

Mfr.#: 74437529203680

OMO.#: OMO-74437529203680

 Fixed Inductors WE-HCF 2920 68uH 20% 17A 10.3mOhm
VR37000002004FA100

Mfr.#: VR37000002004FA100

OMO.#: OMO-VR37000002004FA100-VISHAY

 Metal Film Resistors - Through Hole 1/2Watt 2Mohms 1% VR37
FCP220N80

Mfr.#: FCP220N80

OMO.#: OMO-FCP220N80-ON-SEMICONDUCTOR

 MOSFET N-CH 800V 23A
BD437TG

Mfr.#: BD437TG

OMO.#: OMO-BD437TG-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT 4A 45V 36W NPN
Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of FCP650N80Z is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.92
$1.92
10
$1.63
$16.30
100
$1.30
$130.00
500
$1.14
$570.00
1000
$0.95
$947.00
2500
$0.88
$2 205.00
5000
$0.85
$4 245.00
10000
$0.82
$8 170.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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