IRF7451TRPBF

Mfr. #:: IRF7451TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 150V 3.6A 90mOhm 28nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7451TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF7451TRPBF Datasheet IRF7451TRPBF Datasheet (P4-P6)IRF7451TRPBF Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 3.6 A

Rds On - Drain-Source Resistance:: 90 mOhms

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 28 nC

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001554272

Unit Weight:: 0.019048 oz

Tags: IRF7451TRP, IRF7451T, IRF7451, IRF745, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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IRF7451TRPBF Description

***ure Electronics: Single N-Channel 150 V 0.09 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R / MOSFET N-CH 150V 3.6A 8-SOIC

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:30V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***nell: MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V

*** Source Electronics: Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC

***eco: Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

***ter Electronics: MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ure Electronics: Si4848DY Series 150 V 3.7 A 0.85 Ohm Surface Mount N-Channel Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 0.068Ohm,ID 2.7A,SO-8,PD 1.5W,VGS +/-20V

***ical: Trans MOSFET N-CH 150V 2.7A 8-Pin SOIC N T/R

***eco: SI4848DY-T1-E3,N-CH MOSFET SO- 8 150V 85MOHM '@ 10V QG=21NC<

***ment14 APAC: TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:3.7A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): SI4100DY-T1-E3 N-channel MOSFET Module, 6.8 A, 100 V, 8-Pin SOIC

***et: Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R

***ure Electronics: N-CH MOSFET SO-8 100V 63MOHM @ 10V

***ponent Sense: TRA FET SIG (MOSFET N 100V/6,8

***ineon SCT: Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs, PG-DSO-8, RoHS

***ical: Trans MOSFET P-CH 20V 4A Automotive 8-Pin DSO T/R

***i-Key: 3.2A, 20V, 0.067OHM, 2-ELEMENT,

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Normal level, logic level or super logic level; Avalanche rated; Pb-free lead plating; RoHS compliant | Target Applications: Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***ure Electronics: Single N-Channel 200 V 0.17 Ohm 39 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC T/R

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: Mosfet, N-Ch, 200V, 2.5A, Soic-8; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***et Japan: Transistor MOSFET Array Dual P-CH 30V 4.9A 8-Pin SOIC T/R

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***nell: MOSFET, DUAL P-CH, -30V, -3.9A, SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -3.9A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): MOSFET P-Ch 30V 3.9A Enhancement SOIC8

***ical: Trans MOSFET P-CH 30V 3.9A Automotive 8-Pin SO T/R

***ronik: Dual P-CH -30V -3,9A 70mOhm SO8

Market price

Part #	Mfg.	Description	Stock	Price
IRF7451TRPBF DISTI # V72:2272_13891044	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	3000:$0.5106 1000:$0.5115 500:$0.6082 250:$0.6798 100:$0.6818 25:$0.8294 10:$0.8329 1:$0.9394
IRF7451TRPBF DISTI # IRF7451PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6450In Stock	1000:$0.7107 500:$0.8806 100:$1.1143 10:$1.3900 1:$1.5600
IRF7451TRPBF DISTI # IRF7451PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6450In Stock	1000:$0.7107 500:$0.8806 100:$1.1143 10:$1.3900 1:$1.5600
IRF7451TRPBF DISTI # IRF7451PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.6488
IRF7451TRPBF DISTI # 30331655	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	3000:$0.5106 1000:$0.5115 500:$0.6082 250:$0.6798 100:$0.6818 25:$0.8294 17:$0.8329
IRF7451TRPBF DISTI # 26645263	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.4524
IRF7451TRPBF DISTI # IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7451TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 4000	4000:$0.5309 8000:$0.5119 16000:$0.4929 24000:$0.4769 40000:$0.4679
IRF7451TRPBF DISTI # IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R - Cut TR (SOS) (Alt: IRF7451TRPBF) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 2980	1:$0.4559 40:$0.4549 100:$0.4539 200:$0.4519 500:$0.4509 1000:$0.4499 2000:$0.4489
IRF7451TRPBF DISTI # IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R (Alt: IRF7451TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF7451TRPBF DISTI # SP001554272	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R (Alt: SP001554272) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.5749 8000:€0.4699 16000:€0.4309 24000:€0.3979 40000:€0.3699
IRF7451TRPBF DISTI # 13AC9196	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.09ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power , RoHS Compliant: Yes	2196	1:$1.2400 10:$1.0500 25:$0.9690 50:$0.8880 100:$0.8070 250:$0.7600 500:$0.7130 1000:$0.5630
IRF7451TRPBF DISTI # 70018908	Infineon Technologies AG	MOSFET,150V,3.6A,90 MOHM,28 NC QG,SO-8 RoHS: Compliant	0	4000:$1.6100 8000:$1.5780 20000:$1.5300 40000:$1.4650 100000:$1.3690
IRF7451TRPBF	International Rectifier	RoHS: Not Compliant	12000	1000:$0.5600 500:$0.5900 100:$0.6100 25:$0.6400 1:$0.6900
IRF7451TRPBF DISTI # 942-IRF7451TRPBF	Infineon Technologies AG	MOSFET MOSFT 150V 3.6A 90mOhm 28nC RoHS: Compliant	2470	1:$1.2400 10:$1.0500 100:$0.8070 500:$0.7130 1000:$0.5630 4000:$0.4990
IRF7451TRPBF DISTI # C1S322000484788	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.5170
IRF7451TRPBF DISTI # C1S322000484797	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	250:$0.6798 100:$0.6820 25:$0.8295 10:$0.8329
IRF7451TRPBF DISTI # 2725905	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC RoHS: Compliant	2236	5:£0.8910 25:£0.8030 100:£0.6170 250:£0.5810 500:£0.5440
IRF7451TRPBF DISTI # 2725905	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC RoHS: Compliant	2196	1:$1.9700 10:$1.6600 100:$1.2900 500:$1.1300 1000:$0.8910 4000:$0.7940

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IRF7451TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes