MDP1933TH

MDP1933TH
Mfr. #:
MDP1933TH
Manufacturer:
MagnaChip Semiconductor Ltd
Description:
Lifecycle:
New from this manufacturer.
Datasheet:
MDP1933TH Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
MDP193, MDP19, MDP1, MDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 80V 105A 3-Pin(3+Tab) TO-220 Tube
***el Electronic
Power Field-Effect Transistor,
***ure Electronics
Single N-Channel 40 V 4.1 mOhm 42 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220 Tube
***el Electronic
INFINEON - IPP041N04NGXKSA1 - MOSFET, N CH, 80A, 40V, PG-TO220-3
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 80A, 40V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 4.1 / Gate-Source Voltage V = 20 / Fall Time ns = 4.8 / Rise Time ns = 3.8 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***ure Electronics
Single N-Channel 60 V 3.2 mOhm 165 nC OptiMOS™ Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 60V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3.2 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 120 / Turn-OFF Delay Time ns = 62 / Turn-ON Delay Time ns = 35 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 120 V 11.4 mOhm 49 nC OptiMOS™ Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 100V 75A Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
Mosfet, N-Ch, 120V, 75A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO220-3, RoHS
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***icroelectronics
N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube
***enic
75V 80A 300W 11m´Î@10V40A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 9.5 / Gate-Source Voltage V = 20 / Fall Time ns = 30 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 66 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STP Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Alternate Case Style:SOT-78B; Current Id Max:80A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:117nC; On State resistance Vgs = 10V:11mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:320A; Rate of Voltage Change dv / dt:12V/µs; Termination Type:Through Hole; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:3V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:2V
***icroelectronics
N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 90A TO-220
***ure Electronics
Single N-Channel 30 V 150 W 47 nC Silicon Through Hole Mosfet - TO-220-3
***enic
30V 90A 150W 6.5m´Î@10V45A 2.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ponent Stockers USA
90 A 30 V 0.0065 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube
***enic
75V 80A 300W 11m´Î@10V40A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ponent Stockers USA
80 A 75 V 0.011 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part # Mfg. Description Stock Price
MDP1933THMagnaChip Semiconductor Ltd 
RoHS: Compliant
Europe - 650
    Image Part # Description
    MDP16OAT1100R

    Mfr.#: MDP16OAT1100R

    OMO.#: OMO-MDP16OAT1100R-E-SWITCH

    Pushbutton Switches 8A 125VAC Momentary Rectangle Red
    MDP10N50TH

    Mfr.#: MDP10N50TH

    OMO.#: OMO-MDP10N50TH-1190

    New and Original
    MDP1603-473G

    Mfr.#: MDP1603-473G

    OMO.#: OMO-MDP1603-473G-1190

    Resistor Network, Thick Film, 47K Ohm, 2±%, 100ppm
    MDP160310KOGD04

    Mfr.#: MDP160310KOGD04

    OMO.#: OMO-MDP160310KOGD04-1190

    New and Original
    MDP14-01-180RGD04

    Mfr.#: MDP14-01-180RGD04

    OMO.#: OMO-MDP14-01-180RGD04-433

    Res Thick Film NET 180 Ohm 2% 1.73W ±100ppm/°C BUS Molded 14-Pin DIP Pin Thru-Hole Tube - Bulk (Alt: MDP1401180RGD04)
    MDP16-05-131AGD04

    Mfr.#: MDP16-05-131AGD04

    OMO.#: OMO-MDP16-05-131AGD04-433

    Res Thick Film NET 220 Ohm/330 Ohm 2% 1.92W ±100ppm/°C TERM Molded 16-Pin DIP Pin Thru-Hole Tube - Bulk (Alt: MDP1605131AGD04)
    MDP1603560KGD04

    Mfr.#: MDP1603560KGD04

    OMO.#: OMO-MDP1603560KGD04-840

    Resistor Networks & Arrays 16pin 560Kohms 2% Isolated
    MDP1401560RGE04

    Mfr.#: MDP1401560RGE04

    OMO.#: OMO-MDP1401560RGE04-840

    Resistor Networks & Arrays 14pin 560ohms 2% Bussed
    MDP1601220KGE04

    Mfr.#: MDP1601220KGE04

    OMO.#: OMO-MDP1601220KGE04-840

    Resistor Networks & Arrays 16pin 220Kohms 2% Bussed
    MDP160120K0GE04

    Mfr.#: MDP160120K0GE04

    OMO.#: OMO-MDP160120K0GE04-VISHAY-DALE

    Resistor Networks & Arrays 16pin 20Kohms 2% Bussed
    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of MDP1933TH is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Top