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TK31E60W,S1VX

TK31E60W,S1VX
Mfr. #:
TK31E60W,S1VX
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
Lifecycle:
New from this manufacturer.
Datasheet:
TK31E60W,S1VX Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31E60W,S1VX DatasheetTK31E60W,S1VX Datasheet (P4-P6)TK31E60W,S1VX Datasheet (P7-P9)TK31E60W,S1VX Datasheet (P10)
ECAD Model:
More Information:
TK31E60W,S1VX more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
30.8 A
Rds On - Drain-Source Resistance:
73 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.7 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
86 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
230 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Height:
15.1 mm
Length:
10.16 mm
Series:
TK31E60W
Transistor Type:
1 N-Channel
Width:
4.45 mm
Brand:
Toshiba
Fall Time:
8.5 ns
Product Type:
MOSFET
Rise Time:
32 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
165 ns
Typical Turn-On Delay Time:
70 ns
Unit Weight:
0.211644 oz
Tags
TK31E60W,S, TK31E60W, TK31E, TK31, TK3
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-220 Tube
***i-Key
MOSFET N-CH 600V 30.8A TO220
***et
DTMOSIV_600V_88MOHM MAX(VGS=10V)_TO-220
***
600V N-CH 30.8A 290W FET
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Part # Mfg. Description Stock Price
TK31E60W,S1VX
DISTI # V99:2348_13896173		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST50
  • 2500:$3.6840
  • 1000:$3.7920
  • 500:$4.3040
  • 250:$4.6970
  • 100:$5.0910
  • 50:$5.5940
  • 10:$6.0950
  • 1:$6.6990
TK31E60W,S1VX
DISTI # TK31E60WS1VX-ND		Toshiba America Electronic ComponentsMOSFET N CH 600V 30.8A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$6.7424
TK31E60W,S1VX
DISTI # 30524838		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST50
  • 50:$5.5839
  • 10:$6.0839
  • 2:$6.6860
TK31E60WS1VX
DISTI # TK31E60W,S1VX		Toshiba America Electronic ComponentsTrans MOSFET N 600V 30.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK31E60W,S1VX)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 0
  • 50:$4.5900
  • 100:$4.3900
  • 200:$4.0900
  • 300:$3.8900
  • 500:$3.7900
TK31E60W,S1VX
DISTI # 757-TK31E60WS1VX		Toshiba America Electronic ComponentsMOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
RoHS: Compliant		57
  • 1:$7.6300
  • 10:$6.8700
  • 50:$6.2600
  • 100:$5.6500
  • 250:$5.1900
  • 500:$4.7300
  • 1000:$4.1200
TK31E60W,S1VX(S
DISTI # 8912958		Toshiba America Electronic ComponentsMOSFETDTMOS4600V/31ATO220, PK24
  • 2:£2.6000
  • 10:£2.2900
  • 20:£2.0000
  • 50:£1.8700
  • 100:£1.7700
TK31E60W,S1VX(S
DISTI # 8276182P		Toshiba America Electronic ComponentsMOSFETDTMOS4600V/31ATO220, BG334
  • 10:£2.2900
  • 20:£2.0000
  • 50:£1.8700
  • 100:£1.7850
TK31E60W,S1VX(S)
DISTI # C1S751201082491		Toshiba America Electronic ComponentsMOSFETs50
  • 50:$8.4400
  • 10:$8.8400
TK31E60W,S1VX
DISTI # C1S751200875751		Toshiba America Electronic ComponentsMOSFETs50
  • 50:$5.5839
  • 10:$6.0839
  • 1:$6.6860
TK31E60W,S1VXToshiba America Electronic ComponentsMOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
RoHS: Compliant		Americas -
    TK31E60WS1VXToshiba America Electronic ComponentsMOSFET N-CH 30.8A 290W FET 600V
    RoHS: Compliant    		Americas -
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      Availability
      Stock:
      29
      On Order:
      2012
      Enter Quantity:
      Current price of TK31E60W,S1VX is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $7.63
      $7.63
      10
      $6.87
      $68.70
      50
      $6.26
      $313.00
      100
      $5.65
      $565.00
      250
      $5.19
      $1 297.50
      500
      $4.73
      $2 365.00
      1000
      $4.12
      $4 120.00
      2500
      $3.97
      $9 925.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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