IRFM150

Mfr. #:: IRFM150
Manufacturer:: IR
Description:: Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA
Lifecycle:: New from this manufacturer.
Datasheet:: IRFM150 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: IR

Product Category: IC Chips

Tags: IRFM1, IRFM, IRF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFM150 Description

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ernational Rectifier: 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package

***ure Electronics: Single N-Channel 100 V 150 W 0.07 nC Hexfet Power Mosfet Flange Mount - TO-254AA

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ernational Rectifier: 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

***et: Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3

***o-Tech: N-channel MOSFET,IRF150 38A 100V TO3

***ark: N Channel Mosfet, 100V, 38A, To-3

***S: French Electronic Distributor since 1988

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ernational Rectifier: 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

***ment14 APAC: N CH MOSFET, 100V, 38A, TO-204AA; Transi; N CH MOSFET, 100V, 38A, TO-204AA; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:100V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V

***eco: Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC

***ure Electronics: Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC

***klin Elektronik: INFINEON THT MOSFET NFET 100V 42A 36mΩ 175°C TO-247 IRFP150N

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V

***ure Electronics: Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 100V 42A 36mΩ 150°C TO-220 IRF1310NPBF

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220

***ure Electronics: N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220

***enic: 100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET

***th Star Micro: Transistor MOSFET N-CH 100V 40A 3-Pin (3+Tab) TO-220 Tube

*** Electronics: In a Tube of 50, N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STMicroelectronics STP40NF10L

***ure Electronics: STP40NF10L Series 100 V 33 mOhm N-Ch Low Gate Charge STripFET Mosfet TO-220

***ponent Stockers USA: 40 A 100 V 0.036 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation

***r Electronics: Power Field-Effect Transistor, 40A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***el Electronic: AMPHENOL ICC - GSB3211311WEU - USB Connector, USB Type B, USB 3.0, Receptacle, 9 Positions, Through Hole Mount, Right Angle

Market price

Part #	Mfg.	Description	Stock	Price
IRFM150 DISTI # V36:1790_15909535	International Rectifier	Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA	858	100:$107.3300 25:$109.5200 10:$112.2000 1:$112.6300
IRFM150 DISTI # 27509677	International Rectifier	Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA RoHS: Not compliant	858	100:$107.3300 25:$109.5200 10:$112.2000 1:$112.6300
IRFM150 DISTI # IRFM150	Infineon Technologies AG	Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRFM150) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$100.8900 52:$97.1900 102:$80.8900 250:$74.1900 500:$72.8900
IRFM150	International Rectifier	MOSFET Transistor, N-Channel, TO-254AA	1	1:$71.7220
IRFM150 DISTI # C1S327400083634	Infineon Technologies AG	Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA RoHS: Not Compliant	858	100:$106.8800 25:$109.0700 10:$111.9300 1:$112.5000

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IRFM150

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes