IPW60R070CFD7XKSA1

Mfr. #:: IPW60R070CFD7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPW60R070CFD7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPW60R070CFD7XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 31 A

Rds On - Drain-Source Resistance:: 57 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 67 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 156 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Series:: CoolMOS CFD7

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 6 ns

Product Type:: MOSFET

Rise Time:: 23 ns

Factory Pack Quantity:: 240

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 99 ns

Typical Turn-On Delay Time:: 26 ns

Part # Aliases:: IPW60R070CFD7 SP001617990

Tags: IPW60R070C, IPW60R070, IPW60R07, IPW60R0, IPW60, IPW6, IPW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPW60R070CFD7XKSA1 Description

***et Europe: CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3

***ark: Mosfet, N-Ch, 600V, 31A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes

***ineon: Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:

IPW60R070CFD7XKSA1 More Information

CFD7 CoolMOS™ MOSFETs: Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPW60R070CFD7XKSA1 DISTI # V99:2348_18786389	Infineon Technologies AG	HIGH POWER_NEW	230	500:$4.6710 250:$4.9240 100:$5.2050 25:$6.1750 10:$6.4710 1:$7.8650
IPW60R070CFD7XKSA1 DISTI # V36:1790_18786389	Infineon Technologies AG	HIGH POWER_NEW	0	240000:$3.5240 120000:$3.5290 24000:$4.2970 2400:$5.9060 240:$6.1900
IPW60R070CFD7XKSA1 DISTI # IPW60R070CFD7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	384In Stock	720:$4.9237 240:$5.6543 25:$6.5120 10:$6.8300 1:$7.5600
IPW60R070CFD7XKSA1 DISTI # 32740012	Infineon Technologies AG	HIGH POWER_NEW	230	2:$7.8650
IPW60R070CFD7XKSA1 DISTI # 33637520	Infineon Technologies AG	HIGH POWER_NEW	75	3:$3.7891
IPW60R070CFD7XKSA1 DISTI # IPW60R070CFD7XKSA1	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R070CFD7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$3.7900 1440:$3.8900 960:$3.9900 480:$4.1900 240:$4.2900
IPW60R070CFD7XKSA1 DISTI # SP001617990	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 (Alt: SP001617990) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€3.4900 500:€3.5900 100:€3.6900 50:€3.7900 25:€3.9900 10:€4.3900 1:€5.3900
IPW60R070CFD7XKSA1 DISTI # 43AC9330	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	141	500:$4.7300 250:$5.1900 100:$5.4300 50:$5.8500 25:$6.2600 10:$6.5700 1:$7.2600
IPW60R070CFD7XKSA1 DISTI # 726-IPW60R070CFD7XKS	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	7414	1:$7.1900 10:$6.5000 25:$6.2000 100:$5.3800 250:$5.1400 500:$4.6800
IPW60R070CFD7XKSA1 DISTI # 2807983	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-247	861	100:£4.1500 50:£4.4700 10:£4.7800 5:£5.5400 1:£6.0700
IPW60R070CFD7XKSA1 DISTI # 2807983	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-247 RoHS: Compliant	191	250:$6.0600 100:$6.1700 50:$6.5100 10:$6.8900 5:$7.7900 1:$8.3300

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Availability

Stock:: Available
On Order:: 1990
Enter Quantity:

Current price of IPW60R070CFD7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$7.19~~; ~~$7.19~~

10: ~~$6.50~~; ~~$65.00~~

25: ~~$6.20~~; ~~$155.00~~

100: ~~$5.38~~; ~~$538.00~~

250: ~~$5.14~~; ~~$1 285.00~~

500: ~~$4.68~~; ~~$2 340.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes