PSMN1R5-30BLEJ

PSMN1R5-30BLEJ
Mfr. #:
PSMN1R5-30BLEJ
Manufacturer:
Nexperia
Description:
MOSFET N-channel 30 V 1.5 mo FET
Lifecycle:
New from this manufacturer.
Datasheet:
PSMN1R5-30BLEJ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
PSMN1R5-30BLEJ more Information
Product Attribute
Attribute Value
Manufacturer:
Nexperia
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
1.3 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.7 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
228 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
401 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Nexperia
Fall Time:
99.2 ns
Product Type:
MOSFET
Rise Time:
156.1 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
191.8 ns
Typical Turn-On Delay Time:
100.6 ns
Unit Weight:
0.139332 oz
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
***ure Electronics
Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package
***p One Stop Japan
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 30V D2PAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Part # Mfg. Description Stock Price
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853
NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # V72:2272_06540853
    NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-1-ND
      NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-6-ND
      NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-2-ND
      NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 800
      Container: Tape & Reel (TR)
      On Order
      • 1600:$1.4430
      • 800:$1.7110
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ
      NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel
      Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ
      NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape
      Americas - 0
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025
        NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ
        NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant
        3854
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLEJ
        DISTI # 2281225
        NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant
        0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225
        NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant
        0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
        Image Part # Description
        SBR2U60S1F-7

        Mfr.#: SBR2U60S1F-7

        OMO.#: OMO-SBR2U60S1F-7

        Schottky Diodes & Rectifiers Super Barrier Rectifier
        SLG55021-200010V

        Mfr.#: SLG55021-200010V

        OMO.#: OMO-SLG55021-200010V

        Gate Drivers Green FET High Voltage, Gate Driver
        FDWS9509L-F085

        Mfr.#: FDWS9509L-F085

        OMO.#: OMO-FDWS9509L-F085

        MOSFET PMOS PWR56 40V 8 MOHM
        PMEG40T30EPX

        Mfr.#: PMEG40T30EPX

        OMO.#: OMO-PMEG40T30EPX

        Schottky Diodes & Rectifiers PMEG40T30EP/SOD128/F
        V60D45CHM3_A/I

        Mfr.#: V60D45CHM3_A/I

        OMO.#: OMO-V60D45CHM3-A-I

        Schottky Diodes & Rectifiers TMBS 45V Vrrm eSMP AEC-Q101 Qualified
        2-1445098-5

        Mfr.#: 2-1445098-5

        OMO.#: OMO-2-1445098-5

        Pin & Socket Connectors HDR ASSY 5 POS R/A SINGLE ROW 30 AU
        LRMAT2512-R003FT4

        Mfr.#: LRMAT2512-R003FT4

        OMO.#: OMO-LRMAT2512-R003FT4-1190

        CURR SENSE RES, AEC-Q200, 0R003, 2W, 2512, Resistance:0.003ohm, Product Range:LRMA Series, Resistor Case Style:2512 [6432 Metric], Power Rating:2W, Resistance Tolerance:± 1%, Resistor Element Ty
        2-1445098-5

        Mfr.#: 2-1445098-5

        OMO.#: OMO-2-1445098-5-TE-CONNECTIVITY

        Pin & Socket Connectors HDR ASSY 5 POS R/A SINGLE ROW 30 AU
        V60D45CHM3_A/I

        Mfr.#: V60D45CHM3_A/I

        OMO.#: OMO-V60D45CHM3-A-I-VISHAY

        DIODE ARRAY SCHOTTKY 45V TO263AC
        GRM21BR60J107ME15L

        Mfr.#: GRM21BR60J107ME15L

        OMO.#: OMO-GRM21BR60J107ME15L-MURATA-ELECTRONICS

        Cap Ceramic 100uF 6.3V X5R 20% Pad SMD 0805 85C T/R
        Availability
        Stock:
        Available
        On Order:
        1986
        Enter Quantity:
        Current price of PSMN1R5-30BLEJ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.72
        $2.72
        10
        $2.31
        $23.10
        100
        $2.01
        $201.00
        250
        $1.90
        $475.00
        500
        $1.71
        $855.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
        Start with
        Newest Products
        • LFPAK Bipolar Transistors
          Nexperia's LFPAK bipolar transistors deliver DPAK-like thermal and electrical performance in space saving 5 mm x 6 mm package outlines and low profiles of 1 mm.
        • Trench 9 40 V MOSFETs
          Nexperia’s Trench 9 power MOSFETs combine low voltage superjunction technology with advanced packaging capability.
        • CMF with ESD Protection for High-Speed Data Commun
          Nexperia has designed common mode filters with electrostatic discharge protection for 1, 2, and 3 differential line pairs.
        • PMV50XP, 20 V, P-Channel Trench MOSFET
          Nexperia offers their P-channel, enhancement-mode FET in a small, SOT23 (TO-236AB), SMD, plastic package using trench MOSFET technology.
        • Compare PSMN1R5-30BLEJ
          PSMN1R530BLE vs PSMN1R530BLE118 vs PSMN1R530BLEJ
        • PMCM4401VPE MOSFET
          Nexperia's P-channel enhancement mode field-effect transistor (FET) in a 4 bumps wafer-level, chip-size package (WLCSP).
        Top