TGF2018

Mfr. #:: TGF2018
Manufacturer:: Qorvo
Description:: RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
Lifecycle:: New from this manufacturer.
Datasheet:: TGF2018 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: TGF2018 more Information

Product Attribute
Attribute Value

Manufacturer:: Qorvo

Product Category:: RF JFET Transistors

RoHS:: Y

Transistor Type:: pHEMT

Technology:: GaAs

Gain:: 14 dB

Vds - Drain-Source Breakdown Voltage:: 8 V

Vgs - Gate-Source Breakdown Voltage:: - 15 V

Id - Continuous Drain Current:: 58 mA

Maximum Drain Gate Voltage:: 12 V

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 640 mW

Mounting Style:: SMD/SMT

Packaging:: Gel Pack

Configuration:: Single

Operating Frequency:: 20 GHz

Operating Temperature Range:: - 65 C to + 150 C

Product:: RF JFET

Series:: TGF

Type:: GaAs pHEMT

Brand:: Qorvo

Forward Transconductance - Min:: 70 mS

NF - Noise Figure:: 1 dB

P1dB - Compression Point:: 22 dBm

Product Type:: RF JFET Transistors

Factory Pack Quantity:: 100

Subcategory:: Transistors

Part # Aliases:: 1098412

Tags: TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2018 Description

***W: Transistor, DC- 20 GHz, 22 dBm, 14.5 dB, 1 dB NF, 8V DIE

TGF2018 More Information

TGF2018/25 Heterojunction Power FETs: Qorvo TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
TGF2018 DISTI # 772-TGF2018	Qorvo	RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm RoHS: Compliant	200	100:$5.8300 300:$5.4500 500:$5.0900 1000:$4.7600

TGF2018

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes