TSM2301ACX RF

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

2.8 A

Rds On - Drain-Source Resistance:

90 mOhms

Vgs th - Gate-Source Threshold Voltage:

600 mV

Vgs - Gate-Source Voltage:

4.5 V

Qg - Gate Charge:

7.2 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

700 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 P-Channel

Brand:

Taiwan Semiconductor

Fall Time:

5 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

43 ns

Typical Turn-On Delay Time:

38 ns

Unit Weight:

0.000282 oz

Tags

TSM2301A, TSM2301, TSM230, TSM23, TSM2, TSM