IPL65R1K5C6SATMA1

Mfr. #:: IPL65R1K5C6SATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 650V 3A ThinPAK 5x6
Lifecycle:: New from this manufacturer.
Datasheet:: IPL65R1K5C6SATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPL65R1K5C6SATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: ThinPAK-56-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 3 A

Rds On - Drain-Source Resistance:: 1.5 Ohms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 11 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 26.6 W

Configuration:: Single

Tradename:: CoolMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 6 mm

Series:: CoolMOS C6

Transistor Type:: 1 N-Channel

Width:: 5 mm

Brand:: Infineon Technologies

Fall Time:: 18.2 ns

Product Type:: MOSFET

Rise Time:: 5.9 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 33 ns

Typical Turn-On Delay Time:: 7.7 ns

Part # Aliases:: IPL65R1K5C6S SP001163086

Unit Weight:: 0.002677 oz

Tags: IPL65R1K, IPL65R1, IPL65R, IPL65, IPL6, IPL

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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IPL65R1K5C6SATMA1 Description

***ical: Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R

***ineon SCT: The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs, PG-TSON-8, RoHS

***et: MOS Power Transistors HV (>= 200V)

***ineon: The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting

*** Electronics: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: Single N-Channel 500 V 1.4 Ohm 8.2 nC OptiMOS Power Mosfet - DPAK

*** Stop Electro: Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 500V, 3.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***ical: Trans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R

***ark: Mosfet, N-Ch, 600V, 3A, Smd; Transistor Polarity:n Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.35Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes

***ineon: The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK

***ure Electronics: N-Channel 600 V 3.9 A 1.2 Ohm Surface Mount SuperFET® Mosfet - TO-252-3

***ment14 APAC: MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:3.9A; On State Resistance Max:1.2ohm; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:11.7A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package

***ure Electronics: N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***et Europe: Trans MOSFET N-CH 700V 3.9A 3-Pin TO-252 T/R

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 700V VDS, 30±V VGS,

*** Stop Electro: Power Field-Effect Transistor, 3.9A I(D), 700V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IPL65R1K5C6SATMA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPL65R1K5C6SATMA1 DISTI # V72:2272_06384406	Infineon Technologies AG	Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R RoHS: Compliant	0
IPL65R1K5C6SATMA1 DISTI # V36:1790_06384406	Infineon Technologies AG	Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R RoHS: Compliant	0	5000000:$0.4071 2500000:$0.4074 500000:$0.4279 50000:$0.4632 5000:$0.4691
IPL65R1K5C6SATMA1 DISTI # IPL65R1K5C6SATMA1-ND	Infineon Technologies AG	MOSFET N-CH 8TSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.4691
IPL65R1K5C6SATMA1 DISTI # IPL65R1K5C6SATMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL65R1K5C6SATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4259 30000:$0.4339 20000:$0.4489 10000:$0.4659 5000:$0.4839
IPL65R1K5C6SATMA1 DISTI # SP001163086	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001163086) RoHS: Compliant Min Qty: 5000	Europe - 0	50000:€0.3989 30000:€0.4299 20000:€0.4659 10000:€0.5079 5000:€0.6209
IPL65R1K5C6SATMA1 DISTI # 726-IPL65R1K5C6SATMA	Infineon Technologies AG	MOSFET N-Ch 650V 3A ThinPAK 5x6 RoHS: Compliant	5113	1:$1.1000 10:$0.9410 100:$0.7230 500:$0.6390 1000:$0.5040 5000:$0.4470 10000:$0.4300

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IPL65R1K5C6SATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes