DMT10H009LH3

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

84 A

Rds On - Drain-Source Resistance:

9 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

20.2 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

96 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

14.9 ns

Product Type:

MOSFET

Rise Time:

10.6 ns

Factory Pack Quantity:

75

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

28.3 ns

Typical Turn-On Delay Time:

5.4 ns

Tags

DMT10H009L, DMT10H00, DMT10H0, DMT10, DMT1, DMT