TK20N60W5,S1VF

TK20N60W5,S1VF
Mfr. #:
TK20N60W5,S1VF
Manufacturer:
Toshiba
Description:
MOSFET Power MOSFET N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
TK20N60W5,S1VF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK20N60W5,S1VF DatasheetTK20N60W5,S1VF Datasheet (P4-P6)TK20N60W5,S1VF Datasheet (P7-P9)TK20N60W5,S1VF Datasheet (P10)
ECAD Model:
More Information:
TK20N60W5,S1VF more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
20 A
Rds On - Drain-Source Resistance:
150 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
55 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
165 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Packaging:
Tube
Height:
20.95 mm
Length:
15.94 mm
Series:
TK20N60W
Width:
5.02 mm
Brand:
Toshiba
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
45 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
100 ns
Typical Turn-On Delay Time:
90 ns
Unit Weight:
1.340411 oz
Tags
TK20N60W5, TK20N, TK20, TK2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247 Tube
***
POWER MOSFET TRANSISTOR
***i-Key
MOSFET N-CH 600V 20A TO247
***el Nordic
Contact for details
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
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Availability
Stock:
97
On Order:
2080
Enter Quantity:
Current price of TK20N60W5,S1VF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.59
$3.59
10
$2.89
$28.90
100
$2.63
$263.00
250
$2.38
$595.00
500
$2.13
$1 065.00
1000
$1.80
$1 800.00
2500
$1.71
$4 275.00
5000
$1.65
$8 250.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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