QPD1000

QPD1000
Mfr. #:
QPD1000
Manufacturer:
Qorvo
Description:
RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
Lifecycle:
New from this manufacturer.
Datasheet:
QPD1000 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD1000 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
19 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
28 V
Vgs - Gate-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
817 mA
Output Power:
24 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
28.8 W
Mounting Style:
SMD/SMT
Package / Case:
QFN-8
Packaging:
Tray
Configuration:
Single
Operating Frequency:
30 MHz to 1.215 GHz
Operating Temperature Range:
- 40 C to + 85 C
Series:
QPD
Brand:
Qorvo
Development Kit:
QPD1000PCB401, QPD1000PCB402
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.8 V
Part # Aliases:
1131140
Tags
QPD100, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, .03- 1.215 GHz, 15W, 28 V, GaN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
QPD1000
DISTI # 772-QPD1000
QorvoRF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
RoHS: Compliant
524
  • 1:$58.0000
  • 25:$51.0000
  • 100:$45.0000
QPD1000PCB4B01
DISTI # 772-QPD1000EB1
QorvoRF Development Tools QPD1000 50-1000MHz Eval Board
RoHS: Compliant
3
  • 1:$875.0000
QPD1000PCB4B02
DISTI # 772-QPD1000EB2
QorvoRF Development Tools QPD1000 200-1200MHz Eval Board
RoHS: Compliant
2
  • 1:$875.0000
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Mfr.#: 600F4R7BT250XT

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Multilayer Ceramic Capacitors MLCC - SMD/SMT 250volts 4.7pF NP0
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Mfr.#: QPD1000PCB4B01

OMO.#: OMO-QPD1000PCB4B01-1152

RF Development Tools QPD1000 50-1000MHz Eval Board
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Mfr.#: MIC7300YM5-TR

OMO.#: OMO-MIC7300YM5-TR-MICROCHIP-TECHNOLOGY

Operational Amplifiers - Op Amps
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Mfr.#: MADL-011021-14150T

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RF PIN DIODE
Availability
Stock:
401
On Order:
2384
Enter Quantity:
Current price of QPD1000 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$58.00
$58.00
25
$51.00
$1 275.00
100
$45.00
$4 500.00
250
$41.00
$10 250.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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