BFR 183 E6327

BFR 183 E6327
Mfr. #:
BFR 183 E6327
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
Lifecycle:
New from this manufacturer.
Datasheet:
BFR 183 E6327 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BFR 183 E6327 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
RF Bipolar Transistors
RoHS:
Y
Series:
BFR183
Transistor Type:
Bipolar
Technology:
Si
Transistor Polarity:
NPN
Collector- Emitter Voltage VCEO Max:
12 V
Emitter- Base Voltage VEBO:
2 V
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Mounting Style:
SMD/SMT
Package / Case:
SOT-23
Packaging:
Reel
Collector- Base Voltage VCBO:
20 V
DC Current Gain hFE Max:
70 at 15 mA at 8 V
Height:
1 mm
Length:
2.9 mm
Operating Frequency:
8000 MHz
Type:
RF Bipolar Small Signal
Width:
1.3 mm
Brand:
Infineon Technologies
Maximum DC Collector Current:
0.065 A
Pd - Power Dissipation:
450 mW
Product Type:
RF Bipolar Transistors
Factory Pack Quantity:
3000
Subcategory:
Transistors
Part # Aliases:
BFR183E6327HTSA1 BFR183E6327XT SP000011054
Unit Weight:
0.000282 oz
Tags
BFR183E, BFR183, BFR18, BFR1, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
Part # Mfg. Description Stock Price
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1CT-ND
Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11781In Stock
  • 1000:$0.1094
  • 500:$0.1394
  • 100:$0.1993
  • 10:$0.3140
  • 1:$0.4100
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1DKR-ND
Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11781In Stock
  • 1000:$0.1094
  • 500:$0.1394
  • 100:$0.1993
  • 10:$0.3140
  • 1:$0.4100
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1TR-ND
Infineon Technologies AGRF TRANS NPN 12V 8GHZ SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 150000:$0.0698
  • 75000:$0.0723
  • 30000:$0.0795
  • 15000:$0.0844
  • 6000:$0.0917
  • 3000:$0.0965
BFR 183 E6327
DISTI # BFR 183 E6327
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: BFR 183 E6327)
RoHS: Compliant
Min Qty: 9000
Container: Tape and Reel
Asia - 0
  • 9000:$0.0693
  • 18000:$0.0674
  • 27000:$0.0655
  • 45000:$0.0638
  • 90000:$0.0630
  • 225000:$0.0622
  • 450000:$0.0614
BFR 183 E6327
DISTI # SP000011054
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.1219
  • 6000:€0.0949
  • 12000:€0.0779
  • 18000:€0.0659
  • 30000:€0.0609
BFR 183 E6327
DISTI # SP000011054
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R (Alt: SP000011054)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.1139
  • 6000:€0.0979
  • 12000:€0.0829
  • 18000:€0.0709
  • 30000:€0.0679
BFR183E6327HTSA1
DISTI # BFR183E6327HTSA1
Infineon Technologies AGTrans GP BJT NPN 12V 0.065A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR183E6327HTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0689
  • 15000:$0.0669
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0609
BFR183E6327HTSA1
DISTI # 97Y1218
Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:450mW,DC Collector Current:65mA,DC Current Gain hFE:100hFE,RF Transistor RoHS Compliant: Yes723
  • 1000:$0.0970
  • 500:$0.1070
  • 250:$0.1170
  • 100:$0.1270
  • 50:$0.1760
  • 25:$0.2260
  • 10:$0.2750
  • 1:$0.4000
BFR 183 E6327
DISTI # 726-BFR183E6327
Infineon Technologies AGRF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
RoHS: Compliant
8157
  • 1:$0.3900
  • 10:$0.2750
  • 100:$0.1270
  • 1000:$0.0970
  • 3000:$0.0830
  • 9000:$0.0760
  • 24000:$0.0710
BFR183E6327HTSA1
DISTI # 726-BFR183E6327HTSA1
Infineon Technologies AGRF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
RoHS: Compliant
8680
  • 1:$0.3900
  • 10:$0.2750
  • 100:$0.1270
  • 1000:$0.0970
  • 3000:$0.0830
  • 9000:$0.0760
  • 24000:$0.0710
BFR183E6327Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant
37800
  • 100:$0.0700
  • 500:$0.0700
  • 1000:$0.0700
  • 1:$0.0800
  • 25:$0.0800
BFR183E6327HTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant
9000
  • 500:$0.0800
  • 1000:$0.0800
  • 25:$0.0900
  • 100:$0.0900
  • 1:$0.1000
BFR183E6327HTSA1
DISTI # 8922245P
Infineon Technologies AGRF TRANSISTOR BJT NPN 12V 0.065A SOT23, RL300
  • 6250:£0.0620
  • 2500:£0.0690
  • 1250:£0.0750
  • 250:£0.0970
BFR183E6327Infineon Technologies AG 11896
    BFR183E6327Infineon Technologies AG 7455
      BFR183E6327Infineon Technologies AG12V,65mA,Bipolar RF NPN Transistor7200
      • 1:$0.1200
      • 100:$0.1000
      • 500:$0.0900
      • 1000:$0.0900
      BFR183E6327HTSA1
      DISTI # 2617468
      Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3
      RoHS: Compliant
      723
      • 3000:$0.1320
      • 1000:$0.1540
      • 100:$0.2010
      • 10:$0.4350
      • 1:$0.6340
      BFR183E6327HTSA1
      DISTI # 2617468
      Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-23-3
      RoHS: Compliant
      748
      • 500:£0.0811
      • 250:£0.0979
      • 100:£0.1030
      • 25:£0.2330
      • 5:£0.2420
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      New and Original
      Availability
      Stock:
      Available
      On Order:
      1991
      Enter Quantity:
      Current price of BFR 183 E6327 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.39
      $0.39
      10
      $0.28
      $2.75
      100
      $0.13
      $12.70
      1000
      $0.10
      $97.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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