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IRFAF50

IRFAF50
Mfr. #:
IRFAF50
Manufacturer:
Rochester Electronics, LLC
Description:
6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Lifecycle:
New from this manufacturer.
Datasheet:
IRFAF50 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
IRFAF, IRFA, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
***ponent Stockers USA
6.2 A 900 V 1.85 ohm N-CHANNEL Si POWER MOSFET TO-204AA
***(Formerly Allied Electronics)
HEXFET, Hi-Rel 900V, 6.2A, 1.6 ohm
***(Formerly Allied Electronics)
IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC
***ure Electronics
Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET
***ical
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220
***ure Electronics
N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:8A; Resistance, Rds On:1.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:32A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:205W; Power, Pd:205W; Resistance, Rds on Max:1.4ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V; Width, External:10.67mm
***ure Electronics
Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS™ Power Mosfet - TO-220-3FP
***et
Transistor MOSFET N-Channel 900V 6.9A 3-Pin TO-220FP Tube
*** Stop Electro
Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
***ure Electronics
N-Channel 900 V 1.3 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
***icroelectronics
N-CHANNEL 900V - 1.1 OHM - 8A TO-247 ZENER PROTECTED SUPERMESH MOSFET
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
N CHANNEL MOSFET, 900V, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***ark
MOSFET, N CH, 900V, 1.12OHM, 8A, TO-220F-3; Transistor Polarity:N Channel; Conti
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 8 A, 1.4 Ω, TO-220F
***ure Electronics
N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220F
***Yang
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 900V, 8A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
IRFAF50International Rectifier 
RoHS: Not Compliant		644
  • 1000:$6.4200
  • 500:$6.7600
  • 100:$7.0400
  • 25:$7.3400
  • 1:$7.9000
IRFAF50International Rectifier6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA1
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    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of IRFAF50 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $9.63
    $9.63
    10
    $9.15
    $91.48
    100
    $8.67
    $866.70
    500
    $8.19
    $4 092.75
    1000
    $7.70
    $7 704.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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