MT3S16U(TE85L,F)

Mfr. #:: MT3S16U(TE85L,F)
Manufacturer:: Toshiba
Description:: RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz
Lifecycle:: New from this manufacturer.
Datasheet:: MT3S16U(TE85L,F) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: MT3S16U(TE85L,F) Datasheet MT3S16U(TE85L,F) Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: MT3S16

Transistor Type:: Bipolar

Technology:: Si

Transistor Polarity:: NPN

DC Collector/Base Gain hfe Min:: 80

Collector- Emitter Voltage VCEO Max:: 5 V

Emitter- Base Voltage VEBO:: 2 V

Continuous Collector Current:: 60 mA

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 125 C

Configuration:: Single

Mounting Style:: SMD/SMT

Package / Case:: SC-70-3

Packaging:: Reel

Collector- Base Voltage VCBO:: 10 V

DC Current Gain hFE Max:: 140

Operating Frequency:: 4 GHz (Typ)

Operating Temperature Range:: - 55 C to + 125 C

Type:: UHF Band Oscillator and Amplifier

Brand:: Toshiba

Pd - Power Dissipation:: 100 mW

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Unit Weight:: 0.000219 oz

Tags: MT3S16U(T, MT3S16U, MT3S16, MT3S1, MT3S, MT3

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MT3S16U(TE85L,F) Description

***i-Key: RF TRANS NPN 5V 4GHZ USM

***ure Electronics: 2SC4083 Series 11 V 50 mA SMT NPN High-Frequency Amplifier Transistor - SC-70

***et: Trans GP BJT NPN 11V 0.05A 3-Pin UMT T/R

***nell: RF TRANS, NPN, 20V, 3.2GHZ, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 3.2GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 56hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: 2SC3838K Series 11 V 50 mA SMT NPN High-Frequency Amplifier Transistor - SC-59

***et: Trans GP BJT NPN 11V 0.05A 3-Pin SMT T/R

***nell: TRANSISTOR,NPN,11V,0.05A,SOT-346; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 11V; Transition Frequency ft: 3.2GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 56hFE; Transis

***ark: TRANSISTOR,NPN,11V,0.05A,SOT-346; Transistor Polarity:NPN; Collector Emitter Voltage Max:11V; Continuous Collector Current:50mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

***ure Electronics: 2SC3838K Series 11 V 50 mA SMT NPN High-frequency Amplifier Transistor - SC-59

***et: Trans GP BJT NPN 11V 0.05A 3-Pin SMT T/R

***S: French Electronic Distributor since 1988

***ure Electronics: MMBT5551 Series NPN 160 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3

*** Source Electronics: TRANS NPN 160V 0.6A SOT23-3 / Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R

***roFlash: Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon

***(Formerly Allied Electronics): Trans GP BJT NPN 160V 0.6A 3Pin SOT23 | Diodes Inc MMBT5551-7-F

***ment14 APAC: Transistor,NPN,160V,0.6A,SOT23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation

***nell: TRANSISTOR,NPN,160V,0.6A,SOT23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 600mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Gain Bandwidth ft Typ: 300MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***ure Electronics: KST10 Series NPN 350 mW 25 V 650 MHz Epitaxial Silicon Transistor - SOT-23-3

*** Electronic Components: Bipolar Transistors - BJT NPN Si Transistor Epitaxial

***r Electronics: RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

***ow.cn: Trans RF BJT NPN 25V 350mW 3-Pin SOT-23 T/R

***nell: TRANS, RF, NPN, 25V, 650MHZ, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 350mW; DC Collector Current: -; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***emi: 600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number

***eco: Trans General Purpose BJT NPN 160 Volt 0.6A 3-Pin SOT-23 Tape and Reel

*** Source Electronics: Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R / TRANS NPN 160V 0.6A SOT-23

***r Electronics: Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***ure Electronics: MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23

*** Electronic Components: Bipolar Transistors - BJT SOT-23 NPN GEN PUR

***ark: Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

***ment14 APAC: TRANSISTOR,NPN,160V,0.6A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:250; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:600mA; Current Ic hFE:250mA; DC Current Gain Max (hfe):250; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; Noise Figure Typ:8dB; Package / Case:SOT23; Power Dissipation Ptot Max:350mW; RF Transistor Case:SOT-23; Termination Type:SMD; Test Frequency:15.7kHz

Market price

Part #	Mfg.	Description	Stock	Price
MT3S16U(TE85L,F) DISTI # MT3S16U(TE85LF)CT-ND	Toshiba America Electronic Components	RF TRANS NPN 5V 4GHZ USM RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5151In Stock	1000:$0.0328 500:$0.0415 250:$0.0470 100:$0.0535 25:$0.0612 10:$0.0680 1:$0.1000
MT3S16U(TE85L,F) DISTI # MT3S16U(TE85LF)TR-ND	Toshiba America Electronic Components	RF TRANS NPN 5V 4GHZ USM RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.1008
MT3S16U(TE85L,F) DISTI # MT3S16U(TE85LF)DKR-ND	Toshiba America Electronic Components	RF TRANS NPN 5V 4GHZ USM RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
MT3S16U(TE85L,F) DISTI # 757-MT3S16UTE85LF	Toshiba America Electronic Components	RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz RoHS: Compliant	2493	1:$0.5500 10:$0.3030 100:$0.1300 1000:$0.1000 3000:$0.0760 9000:$0.0680 24000:$0.0630 45000:$0.0560 99000:$0.0540

MT3S16U(TE85L,F)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes