IXGH30N120BD1

Mfr. #:: IXGH30N120BD1
Manufacturer:: IXYS
Description:: MOSFET 50 Amps 1200V 3.5 V Rds
Lifecycle:: New from this manufacturer.
Datasheet:: IXGH30N120BD1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: IXYS

Product Category: IGBTs - Single

Series: IXGH30N120

Packaging: Tube

Unit-Weight: 0.229281 oz

Mounting-Style: Through Hole

Package-Case: TO-247-3

Technology: Si

Input-Type: Standard

Mounting-Type: Through Hole

Supplier-Device-Package: TO-247AD (IXGH)

Power-Max: -

Reverse-Recovery-Time-trr: -

Current-Collector-Ic-Max: 50A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT-Type: -

Current-Collector-Pulsed-Icm: -

Vce-on-Max-Vge-Ic: -

Switching-Energy: -

Gate-Charge: -

Td-on-off-25°C: -

Test-Condition: -

Id-Continuous-Drain-Current: 50 A

Vds-Drain-Source-Breakdown-Voltage: 1200 V

Tags: IXGH30N12, IXGH30N1, IXGH30, IXGH3, IXGH, IXG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXGH30N120BD1 Description

***i-Key: IGBT 1200V 50A TO247

***ical: Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of P

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode

***ical: Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-

***icroelectronics: Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

***ical: Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

***ure Electronics: IGBT Transistors 1200V/25 FAST IGBT FSII T

***i-Key: IGBT FIELD STOP 1200V 50A TO247

***icroelectronics: Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

***ical: Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of P

Market price

Part #	Mfg.	Description	Stock	Price
IXGH30N120BD1 DISTI # IXGH30N120BD1-ND	IXYS Corporation	IGBT 1200V 50A TO247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$10.7193
IXGH30N120BD1 DISTI # 747-IXGH30N120BD1	IXYS Corporation	MOSFET 50 Amps 1200V 3.5 V Rds RoHS: Compliant	0

Related products

Image	Part #	Description
	Mfr.#: IXGH30N120H OMO.#: OMO-IXGH30N120H-1190	New and Original
	Mfr.#: IXGH30N140A3 OMO.#: OMO-IXGH30N140A3-1190	New and Original
	Mfr.#: IXGH30N60AU1 OMO.#: OMO-IXGH30N60AU1-1190	New and Original
	Mfr.#: IXGH30N60BD1 OMO.#: OMO-IXGH30N60BD1-IXYS-CORPORATION	IGBT 600V 60A 200W TO247
	Mfr.#: IXGH30N60BU1 OMO.#: OMO-IXGH30N60BU1-IXYS-CORPORATION	IGBT 600V 60A 200W TO247AD
	Mfr.#: IXGH30N60C2 OMO.#: OMO-IXGH30N60C2-IXYS-CORPORATION	IGBT 600V 70A 190W TO247
	Mfr.#: IXGH30N60CD1 OMO.#: OMO-IXGH30N60CD1-1190	New and Original
	Mfr.#: IXGH30N60U1 OMO.#: OMO-IXGH30N60U1-1190	MOSFET 30 Amps 600V
	Mfr.#: IXGH30N60C3 OMO.#: OMO-IXGH30N60C3-IXYS-CORPORATION	IGBT Modules 30 Amps 600V
	Mfr.#: IXGH30N60C3D1 OMO.#: OMO-IXGH30N60C3D1-IXYS-CORPORATION	IGBT Modules High Frequency Range 40khz C-IGBT w/Diode

Availability

Stock:: Available
On Order:: 1500
Enter Quantity:

Current price of IXGH30N120BD1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$16.08~~; ~~$16.08~~

10: ~~$15.28~~; ~~$152.75~~

100: ~~$14.47~~; ~~$1 447.11~~

500: ~~$13.67~~; ~~$6 833.55~~

1000: ~~$12.86~~; ~~$12 863.20~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IXGH30N120BD1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes