GS8161E18DD-200IV

GS8161E18DD-200IV
Mfr. #:
GS8161E18DD-200IV
Manufacturer:
GSI Technology
Description:
SRAM 1.8/2.5V 1M x 18 18M
Lifecycle:
New from this manufacturer.
Datasheet:
GS8161E18DD-200IV Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
GS8161E18DD-200IV more Information
Product Attribute
Attribute Value
Manufacturer:
GSI Technology
Product Category:
SRAM
Memory Size:
18 Mbit
Organization:
1 M x 18
Access Time:
6.5 ns
Maximum Clock Frequency:
200 MHz
Interface Type:
Parallel
Supply Voltage - Max:
2.7 V
Supply Voltage - Min:
1.7 V
Supply Current - Max:
210 mA, 215 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Mounting Style:
SMD/SMT
Package / Case:
BGA-165
Packaging:
Tray
Memory Type:
SDR
Series:
GS8161E18DD
Type:
DCD Pipeline/Flow Through
Brand:
GSI Technology
Moisture Sensitive:
Yes
Product Type:
SRAM
Factory Pack Quantity:
18
Subcategory:
Memory & Data Storage
Tradename:
SyncBurst
Tags
GS8161E18DD-20, GS8161E18DD-2, GS8161E18DD, GS8161E1, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 6.5ns/3ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Image Part # Description
GS8161E18DGD-200V

Mfr.#: GS8161E18DGD-200V

OMO.#: OMO-GS8161E18DGD-200V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-150

Mfr.#: GS8161E18DGT-150

OMO.#: OMO-GS8161E18DGT-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-200I

Mfr.#: GS8161E18DGD-200I

OMO.#: OMO-GS8161E18DGD-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-150I

Mfr.#: GS8161E18DGD-150I

OMO.#: OMO-GS8161E18DGD-150I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGT-333

Mfr.#: GS8161E18DGT-333

OMO.#: OMO-GS8161E18DGT-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-150V

Mfr.#: GS8161E18DD-150V

OMO.#: OMO-GS8161E18DD-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGD-150IV

Mfr.#: GS8161E18DGD-150IV

OMO.#: OMO-GS8161E18DGD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DD-400

Mfr.#: GS8161E18DD-400

OMO.#: OMO-GS8161E18DD-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DD-400I

Mfr.#: GS8161E18DD-400I

OMO.#: OMO-GS8161E18DD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-333IV

Mfr.#: GS8161E18DGD-333IV

OMO.#: OMO-GS8161E18DGD-333IV

SRAM 1.8/2.5V 1M x 18 18M
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of GS8161E18DD-200IV is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$26.46
$26.46
25
$24.57
$614.25
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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