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SPB20N60S5

SPB20N60S5
Mfr. #:
SPB20N60S5
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 20A D2PAK-2 CoolMOS S5
Lifecycle:
New from this manufacturer.
Datasheet:
SPB20N60S5 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
20 A
Rds On - Drain-Source Resistance:
190 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
208 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
CoolMOS S5
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
30 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
140 ns
Typical Turn-On Delay Time:
120 ns
Part # Aliases:
SP000012112 SPB20N60S5ATMA1 SPB2N6S5XT
Unit Weight:
0.139332 oz
Tags
SPB20N60S5, SPB20N60S, SPB20N60, SPB20N6, SPB20N, SPB20, SPB2, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 T/R
***et Europe
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 600V 20A TO-263
***ronik
N-CH 600V 20A 190mOhm TO263-3
***ark
Mosfet, N Channel, 600V, 20A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: Yes
***ineon
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance
***ment14 APAC
Prices include import duty and tax. MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:208W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:190mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:208W; Pulse Current Idm:40A; SMD Marking:20N60S5; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
***nell
MOSFET, N, D2-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:20A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.16ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:208W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:20A; Corrente di Impulso Idm:40A; Dissipazione di Potenza Ptot Max:208W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Marcatura SMD:20N60S5; No. di Transistor:1; Resistenza Stato On Max:190mohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:600V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tensione Vgs th Max:5.5V
Part # Mfg. Description Stock Price
SPB20N60S5ATMA1
DISTI # V72:2272_06377347		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		946
  • 500:$3.9510
  • 250:$4.2200
  • 100:$4.4320
  • 25:$4.9670
  • 10:$5.2970
  • 1:$6.3305
SPB20N60S5ATMA1
DISTI # V36:1790_06377347		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    SPB20N60S5ATMA1
    DISTI # SPB20N60S5ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 600V 20A TO-263
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      SPB20N60S5ATMA1
      DISTI # SPB20N60S5ATMA1CT-ND      		Infineon Technologies AGMOSFET N-CH 600V 20A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        SPB20N60S5ATMA1
        DISTI # SPB20N60S5ATMA1DKR-ND        		Infineon Technologies AGMOSFET N-CH 600V 20A TO-263
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          SPB20N60S5ATMA1
          DISTI # 31339560          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
          RoHS: Compliant          		946
          • 500:$3.9490
          • 250:$4.2160
          • 100:$4.4300
          • 25:$4.9680
          • 10:$5.2990
          • 3:$5.7650
          SPB20N60S5
          DISTI # SPB20N60S5          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 (Alt: SPB20N60S5)
          RoHS: Compliant
          Min Qty: 1000          		Asia - 0
          • 50000:$2.4233
          • 25000:$2.4544
          • 10000:$2.4862
          • 5000:$2.5189
          • 3000:$2.5870
          • 2000:$2.6589
          • 1000:$2.7349
          SPB20N60S5XT
          DISTI # SPB20N60S5ATMA1          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB20N60S5ATMA1)
          RoHS: Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
          • 6000:$2.3900
          • 10000:$2.3900
          • 4000:$2.4900
          • 2000:$2.5900
          • 1000:$2.6900
          SPB20N60S5E3045
          DISTI # SP000012112          		Infineon Technologies AGTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 T/R (Alt: SP000012112)
          RoHS: Compliant
          Min Qty: 1000
          Container: Tape and Reel          		Europe - 0
          • 10000:€2.1900
          • 6000:€2.2900
          • 2000:€2.3900
          • 4000:€2.3900
          • 1000:€2.4900
          SPB20N60S5
          DISTI # 21M8755          		Infineon Technologies AGMOSFET, N CHANNEL, 600V, 20A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V RoHS Compliant: Yes0
            SPB20N60S5
            DISTI # 726-SPB20N60S5            		Infineon Technologies AGMOSFET N-Ch 600V 20A D2PAK-2 CoolMOS S5
            RoHS: Compliant            		820
            • 1:$5.0700
            • 10:$4.3100
            • 100:$3.7400
            • 250:$3.5500
            • 500:$3.1800
            • 1000:$2.6900
            • 2000:$2.5500
            SPB20N60S5Infineon Technologies AG*** FREE SHIPPING ORDERS OVER $100 *** 20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB651
            • 329:$2.7225
            • 77:$3.0525
            • 1:$4.9500
            SPB20N60S5Infineon Technologies AG 814
              SPB20N60S5Infineon Technologies AG 460
                SPB20N60S5
                DISTI # 1214264                		Infineon Technologies AGMOSFET, N, D2-PAK
                RoHS: Compliant                		0
                • 500:$4.8900
                • 250:$5.4600
                • 100:$5.7600
                • 10:$6.6300
                • 1:$7.8000
                SPB20N60S5ATMA1
                DISTI # XSKDRABV0049933                		Infineon Technologies AG 
                RoHS: Compliant                		2000 in Stock0 on Order
                • 2000:$4.0440
                • 1000:$4.3320
                SPB20N60S5
                DISTI # TMOSP7892                		Infineon Technologies AGN-CH 600V20A190mOhm TO263-3
                RoHS: Compliant                		Stock DE - 0Stock HK - 0Stock US - 0
                • 1000:$3.9600
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                Availability
                Stock:
                Available
                On Order:
                1984
                Enter Quantity:
                Current price of SPB20N60S5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
                Reference price (USD)
                Quantity
                Unit Price
                Ext. Price
                1
                $5.07
                $5.07
                10
                $4.31
                $43.10
                100
                $3.74
                $374.00
                250
                $3.55
                $887.50
                500
                $3.18
                $1 590.00
                Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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