IPP020N06NAKSA1

Mfr. #:: IPP020N06NAKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 120A TO220-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPP020N06NAKSA1 Datasheet
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More Information:: IPP020N06NAKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 1.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 124 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 214 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Product:: OptiMOS Power

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Type:: OptiMOS 3 Power-Transistor

Width:: 4.4 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 100 S

Fall Time:: 19 ns

Product Type:: MOSFET

Rise Time:: 45 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 51 ns

Typical Turn-On Delay Time:: 24 ns

Part # Aliases:: IPP020N06N IPP2N6NXK SP000917406

Unit Weight:: 0.211644 oz

Tags: IPP020, IPP02, IPP0, IPP

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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IPP020N06NAKSA1 Description

*** Electronics: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3

***ical: Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: Single N-Channel 60 V 2 mOhm 106 nC OptiMOS Power Mosfet - TO-220-3

***nell: MOSFET, N CH, 60V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V;

*** Stop Electro: Power Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 3.2 mOhm 165 nC OptiMOS Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 60V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 3.2 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 120 / Turn-OFF Delay Time ns = 62 / Turn-ON Delay Time ns = 35 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***i-Key: MOSFET N-CH 60V 120A TO220

*** Electronic Components: MOSFET PT3 Low Qg 60V, 4.0Mohm

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***ure Electronics: Single N-Channel 60 V 4 mOhm 98 nC OptiMOS Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 60V 90A 3-Pin TO-220 Tube - Rail/Tube

***el Electronic: INFINEON - IPP040N06N3GXKSA1 - MOSFET, N CH, 90A, 60V, PG-TO220-3

*** Stop Electro: Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 4 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 2.9 mOhm 56 nC OptiMOS Power Mosfet - TO-220-3

***nell: MOSFET, N CH, 60V, 100A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V;

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***icroelectronics: N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package

***ure Electronics: Single N-Channel 55 V 150 W 126 nC Silicon Through Hole Mosfet - TO-220-3

***r Electronics: Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package

***ark: Mosfet Transistor, N Channel, 120 A, 60 V, 0.0024 Ohm, 10 V, 2 V Rohs Compliant: Yes

***ure Electronics: STP260N6F6 Series 60 V 3 mOhm N-Channel STripFET VI DeepGATE Mosfet - TO-220

***ical: Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Tube

***nell: MOSFET, N CH, 60V, 120A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Available until stocks are exhausted Alternative available

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IPP020N06NAKSA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPP020N06NAKSA1 DISTI # V99:2348_06378622	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	450	2500:$2.0610 1000:$2.0880 500:$2.3760 250:$2.7510 100:$2.8420 10:$3.3430 1:$4.3274
IPP020N06NAKSA1 DISTI # V36:1790_06378622	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	500000:$1.7430 250000:$1.7450 50000:$1.9850 5000:$2.4090 500:$2.4800
IPP020N06NAKSA1 DISTI # IPP020N06NAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 29A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	920In Stock	2500:$2.0892 500:$2.6075 100:$3.0631 25:$3.5344 10:$3.7390 1:$4.1600
IPP020N06NAKSA1 DISTI # 32882223	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	450	3:$4.3274
IPP020N06NAKSA1 DISTI # IPP020N06NAKSA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin TO-220 Tube - Bulk (Alt: IPP020N06NAKSA1) RoHS: Compliant Min Qty: 187 Container: Bulk	Americas - 0	561:$1.6900 935:$1.6900 1870:$1.6900 374:$1.7900 187:$1.8900
IPP020N06NAKSA1 DISTI # IPP020N06NAKSA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP020N06NAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$1.9009 3000:$1.9353 2000:$2.0027 1000:$2.0778 500:$2.1556
IPP020N06NAKSA1 DISTI # 85X6036	Infineon Technologies AG	MOSFET Transistor, N Channel, 120 A, 60 V, 0.0018 ohm, 10 V, 2.8 V RoHS Compliant: Yes	0
IPP020N06N DISTI # 726-IPP020N06N	Infineon Technologies AG	MOSFET N-Ch 60V 120A TO220-3 RoHS: Compliant	698	1:$3.9600 10:$3.3600 100:$2.9100 250:$2.7600 500:$2.4800 1000:$2.0900 2500:$1.9900
IPP020N06NAKSA1 DISTI # 726-IPP020N06NAKSA1	Infineon Technologies AG	MOSFET N-Ch 60V 120A TO220-3 RoHS: Compliant	438	1:$3.9600 10:$3.3600 100:$2.9100 250:$2.7600 500:$2.4800 1000:$2.0900 2500:$1.9900
IPP020N06NAKSA1	Infineon Technologies AG	Single N-Channel 60 V 2 mOhm 106 nC OptiMOS Power Mosfet - TO-220-3 RoHS: Not Compliant	200Tube	5:$3.4900 25:$2.4300 50:$2.2400 100:$2.0700 250:$1.8700
IPP020N06NAKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	33	1000:$1.7600 500:$1.8600 100:$1.9300 25:$2.0200 1:$2.1700
IPP020N06NAKSA1 DISTI # 9062919P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 120A OPTIMOS TO220, TU	60	250:£1.8840 100:£1.9900 50:£2.1440 10:£2.3000
IPP020N06NAKSA1 DISTI # 9062919	Infineon Technologies AG	MOSFET N-CHANNEL 60V 120A OPTIMOS TO220, PK	65	250:£1.8840 100:£1.9900 50:£2.1440 10:£2.3000 5:£2.8920
IPP020N06NAKSA1 DISTI # XSFP00000115130	Infineon Technologies AG	RoHS: Compliant	108 in Stock0 on Order	108:$3.2400 42:$3.4700
IPP020N06NAKSA1 DISTI # 2443402	Infineon Technologies AG	MOSFET, N CH, 60V, 120A, TO-220-3 RoHS: Compliant	0	2500:$3.0000 1000:$3.1500 500:$3.7400 250:$4.1600 100:$4.3900 10:$5.0600 1:$5.9700

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	Mfr.#: MBRF20200CTR OMO.#: OMO-MBRF20200CTR	Schottky Diodes & Rectifiers 2x 10A 200V Rectifier
	Mfr.#: MBRF20200CT OMO.#: OMO-MBRF20200CT	Schottky Diodes & Rectifiers 2x 10A 200V Rectifier
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	Mfr.#: TMP275AIDR OMO.#: OMO-TMP275AIDR	Board Mount Temperature Sensors 0.5C Dig Out Temp Sensor

IPP020N06NAKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes