IPP60R099P7XKSA1

Mfr. #:: IPP60R099P7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 600V 31A TO220-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPP60R099P7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPP60R099P7XKSA1 more Information

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Tags: IPP60R099P, IPP60R099, IPP60R09, IPP60R0, IPP60R, IPP60, IPP6, IPP

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We provide 90-360 days warranty.

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IPP60R099P7XKSA1 Description

***ure Electronics: Single N-Channel 600 V 99 mOhm 45 nC CoolMOS Power Mosfet - TO-220-3

***i-Key: MOSFET N-CH 600V 31A TO220-3

***ical: 600V CoolMOS P7 Power Transistor

***ronik: N-CH 650V 100A 99mOhm TO220-3

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 31A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:117W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 600V, 31A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.077ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:117W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

IPP60R099P7XKSA1 More Information

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Part #	Mfg.	Description	Stock	Price
IPP60R099P7XKSA1 DISTI # 24713904	Infineon Technologies AG	600V CoolMOS P7 Power Transistor	500	500:$3.0294
IPP60R099P7XKSA1 DISTI # IPP60R099P7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 31A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2500:$2.3162 500:$2.8836 100:$3.3874 25:$3.9084 10:$4.1340 1:$4.6000
IPP60R099P7XKSA1 DISTI # V36:1790_18203761	Infineon Technologies AG	600V CoolMOS P7 Power Transistor	0
IPP60R099P7XKSA1 DISTI # IPP60R099P7XKSA1	Infineon Technologies AG	HIGH POWER_NEW - Rail/Tube (Alt: IPP60R099P7XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$2.0900 5000:$2.0900 1000:$2.1900 2000:$2.1900 500:$2.2900
IPP60R099P7XKSA1 DISTI # 57AC6814	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	674	500:$2.7700 250:$3.0900 100:$3.2500 50:$3.4200 25:$3.5900 10:$3.7600 1:$4.4200
IPP60R099P7XKSA1 DISTI # 726-IPP60R099P7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	862	1:$4.3800 10:$3.7200 100:$3.2200 250:$3.0600 500:$2.7400 1000:$2.3100 2500:$2.2000
IPP60R099P7XKSA1 DISTI # 2862301	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-220 RoHS: Compliant	1124	100:$5.7100 10:$6.9500 1:$7.7900
IPP60R099P7XKSA1 DISTI # 2862301	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-220	678	100:£2.9700 10:£3.4200 1:£4.5100

Related products

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	Mfr.#: IPP60R099C7XKSA1 OMO.#: OMO-IPP60R099C7XKSA1	MOSFET HIGH POWER_NEW
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	Mfr.#: IPP60R099P6XKSA1 OMO.#: OMO-IPP60R099P6XKSA1	MOSFET HIGH POWER PRICE/PERFORM
	Mfr.#: IPP60R099P7XKSA1 OMO.#: OMO-IPP60R099P7XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 31A TO220-3
	Mfr.#: IPP60R099C6 6R099C6 OMO.#: OMO-IPP60R099C6-6R099C6-1190	New and Original
	Mfr.#: IPP60R099C6XKSA1 OMO.#: OMO-IPP60R099C6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 37.9A TO220
	Mfr.#: IPP60R099C7XKSA1 OMO.#: OMO-IPP60R099C7XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 22A TO220-3
	Mfr.#: IPP60R099CP 6R099P OMO.#: OMO-IPP60R099CP-6R099P-1190	New and Original
	Mfr.#: IPP60R099CPA 6R099A OMO.#: OMO-IPP60R099CPA-6R099A-1190	New and Original
	Mfr.#: IPP60R099CPXKSA1 OMO.#: OMO-IPP60R099CPXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 31A TO-220

Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of IPP60R099P7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.14~~; ~~$3.14~~

10: ~~$2.98~~; ~~$29.78~~

100: ~~$2.82~~; ~~$282.15~~

500: ~~$2.66~~; ~~$1 332.40~~

1000: ~~$2.51~~; ~~$2 508.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPP60R099P7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes