GS-065-008-1-L

GS-065-008-1-L
Mfr. #:
GS-065-008-1-L
Manufacturer:
GaN Systems
Description:
MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
Lifecycle:
New from this manufacturer.
Datasheet:
GS-065-008-1-L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
GS-065-008-1-L more Information
Product Attribute
Attribute Value
Manufacturer:
GaN Systems
Product Category:
MOSFET
RoHS:
Y
Technology:
GaN Si
Mounting Style:
SMD/SMT
Package / Case:
PDFN-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
541 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.4 V
Vgs - Gate-Source Voltage:
- 10 V to 7 V
Qg - Gate Charge:
1.5 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
GS-065
Transistor Type:
1 N-Channel
Brand:
GaN Systems
Moisture Sensitive:
Yes
Product Type:
MOSFET
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Part # Aliases:
GS-065-008-1-L-E01-MR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS-065-0xx 650V Enhancement Mode GaN Transistors
GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.  The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high-efficiency power switching.
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Availability
Stock:
506
On Order:
2489
Enter Quantity:
Current price of GS-065-008-1-L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.79
$5.79
10
$4.65
$46.50
100
$4.24
$424.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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