IRF9332TRPBF

Mfr. #:: IRF9332TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT PCh -30V -9.8A 54mOhm -2.5V cpbl
Lifecycle:: New from this manufacturer.
Datasheet:: IRF9332TRPBF Datasheet
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HTML Datasheet:: IRF9332TRPBF Datasheet IRF9332TRPBF Datasheet (P4-P6)IRF9332TRPBF Datasheet (P7-P8)
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More Information:: IRF9332TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 9.8 A

Rds On - Drain-Source Resistance:: 28.1 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 14 nC

Pd - Power Dissipation:: 2.5 W

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001565710

Unit Weight:: 0.019048 oz

Tags: IRF933, IRF93, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IRF9332TRPBF Description

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

*** Stop Electro: Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***Yang: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ

***ure Electronics: N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***-Wing Technology: ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ure Electronics: N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***(Formerly Allied Electronics): SI4410DYPBF N-channel MOSFET Transistor; 10 A; 30 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***ical: Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R

***ment14 APAC: N CHANNEL MOSFET, 30V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V

***nell: MOSFET, N LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 10A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 50A; SMD Marking: SI4410DY; Termination Type: Surface Mount Device; Voltage Vgs th Min: 1V

***i-Key: MOSFET N-CH 30V 10A 8-SOIC

***S: French Electronic Distributor since 1988

***el Electronic: RES 13.7K OHM 1/10W 1% 0603

***ser: MOSFETs 30V N-Ch. FET

*** Source Electronics: Trans MOSFET P-CH Si 30V 11A 8-Pin SOIC N T/R / Ultra Low On-Resistance

*** Electronics: P-channel MOSFET Transistor, 11 A 30 V, 8-Pin SOIC

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -11A, 13.5 mOhm, 75 nC Qg, SO-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET

***ure Electronics: Single P-Channel 30 V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: Mosfet, P, So-8; Transistor Polarity:p Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0135Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:2.5W Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IRF9332TRPBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF9332TRPBF DISTI # 31271640	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R	4000	4000:$0.2016
IRF9332TRPBF DISTI # 31274813	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R	4000	33:$0.2522
IRF9332TRPBF DISTI # IRF9332TRPBF-ND	Infineon Technologies AG	MOSFET P-CH 30V 9.8A 8SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.3091
IRF9332TRPBF DISTI # V72:2272_13889776	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R	4000	1:$0.2522
IRF9332TRPBF DISTI # IRF9332TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: IRF9332TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2229 8000:$0.2149 16000:$0.2069 24000:$0.1999 40000:$0.1959
IRF9332TRPBF DISTI # SP001565710	Infineon Technologies AG	Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R (Alt: SP001565710) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.2909 8000:€0.2379 16000:€0.2179 24000:€0.2009 40000:€0.1869
IRF9332TRPBF DISTI # 06AC1446	Infineon Technologies AG	MOSFET, P-CH, -30V, -9.8A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0136ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.9V,Power , RoHS Compliant: Yes	274	1:$0.7300 10:$0.6010 25:$0.5300 50:$0.4590 100:$0.3880 250:$0.3620 500:$0.3370 1000:$0.3110
IRF9332TRPBF DISTI # 942-IRF9332TRPBF	Infineon Technologies AG	MOSFET MOSFT PCh -30V -9.8A 54mOhm -2.5V cpbl RoHS: Compliant	0	1:$0.7300 10:$0.6010 100:$0.3880 1000:$0.3110 4000:$0.2620
IRF9332TRPBF DISTI # 2687600	Infineon Technologies AG	MOSFET, P-CH, -30V, -9.8A, SOIC-8 RoHS: Compliant	274	1:$0.9660 10:$0.8420 100:$0.6870
IRF9332TRPBF DISTI # XSLY00000000880	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.3257
IRF9332TRPBF DISTI # 2687600	Infineon Technologies AG	MOSFET, P-CH, -30V, -9.8A, SOIC-8 RoHS: Compliant	472	5:£0.5810 25:£0.5280 100:£0.3330 250:£0.2970 500:£0.2600

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Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of IRF9332TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.72~~; ~~$0.72~~

10: ~~$0.60~~; ~~$6.01~~

100: ~~$0.39~~; ~~$38.80~~

1000: ~~$0.31~~; ~~$311.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes