IXFN48N60P

IXFN48N60P
Mfr. #:
IXFN48N60P
Manufacturer:
Littelfuse
Description:
MOSFET 600V 48A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN48N60P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN48N60P DatasheetIXFN48N60P Datasheet (P4)
ECAD Model:
More Information:
IXFN48N60P more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
140 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
625 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
9.6 mm
Length:
38.23 mm
Series:
IXFN48N60
Transistor Type:
1 N-Channel
Width:
25.42 mm
Brand:
IXYS
Forward Transconductance - Min:
53 S
Fall Time:
22 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
85 ns
Typical Turn-On Delay Time:
30 ns
Unit Weight:
1.058219 oz
Tags
IXFN48, IXFN4, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 40A 4-Pin SOT-227B
***inecomponents.com
MOSFETs w/Fast Intrinsic Diode
***ark
Mosfet Module, N-Ch, 600V, 40A, Sot-227B; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Part # Mfg. Description Stock Price
IXFN48N60P
DISTI # V99:2348_15877410
IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant
320
  • 200:$13.7000
  • 100:$14.2000
  • 50:$15.7800
  • 25:$17.1600
  • 10:$18.2900
  • 5:$19.1600
  • 1:$20.1600
IXFN48N60P
DISTI # V36:1790_15877410
IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant
0
  • 5000:$12.2700
  • 1000:$14.3400
  • 100:$19.3200
  • 10:$20.2400
IXFN48N60P
DISTI # IXFN48N60P-ND
IXYS CorporationMOSFET N-CH 600V 40A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
4In Stock
  • 500:$13.9656
  • 100:$15.9896
  • 30:$17.2040
  • 10:$18.7220
  • 1:$20.2400
IXFN48N60P
DISTI # 32034231
IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant
320
  • 1:$20.1600
IXFN48N60P
DISTI # 02AC9814
IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power RoHS Compliant: Yes0
  • 250:$14.8200
  • 100:$16.1500
  • 50:$16.6300
  • 25:$17.3800
  • 10:$18.9100
  • 5:$19.4200
  • 1:$20.4400
IXFN48N60P
DISTI # 747-IXFN48N60P
IXYS CorporationMOSFET 600V 48A
RoHS: Compliant
55
  • 1:$20.2400
  • 5:$19.2300
  • 10:$18.7200
  • 25:$17.2100
  • 50:$16.4700
  • 100:$15.9900
  • 200:$14.6700
  • 500:$13.9700
IXFN48N60P
DISTI # 194473
IXYS CorporationMOSFET N-CHANNEL 600V 40A SOT227B, EA22
  • 5:£17.3900
  • 1:£18.8300
IXFN48N60P
DISTI # 194473P
IXYS CorporationMOSFET N-CHANNEL 600V 40A SOT227B, TU69
  • 5:£17.3900
IXFN48N60P
DISTI # 2674761
IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B
RoHS: Compliant
0
  • 100:$24.1000
  • 30:$25.9300
  • 10:$28.2200
  • 1:$30.5000
IXFN48N60P
DISTI # 2674761
IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B
RoHS: Compliant
0
  • 100:£11.6400
  • 50:£13.0600
  • 10:£13.6600
  • 5:£15.2600
  • 1:£16.0700
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Availability
Stock:
55
On Order:
2038
Enter Quantity:
Current price of IXFN48N60P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$20.24
$20.24
5
$19.23
$96.15
10
$18.72
$187.20
25
$17.21
$430.25
50
$16.47
$823.50
100
$15.99
$1 599.00
200
$14.67
$2 934.00
500
$13.97
$6 985.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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