CMPA801B025F

Mfr. #:: CMPA801B025F
Manufacturer:: N/A
Description:: RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
Lifecycle:: New from this manufacturer.
Datasheet:: CMPA801B025F Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: CMPA801B025F more Information

Product Attribute
Attribute Value

Manufacturer:: Qorvo

Product Category:: RF Amplifier

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: DFN-8

Type:: Flat Gain LNA

Operating Frequency:: 600 MHz to 6 GHz

P1dB - Compression Point:: 19 dBm

Gain:: 21.6 dB

Operating Supply Voltage:: 5 V

NF - Noise Figure:: 0.95 dB

Test Frequency:: 5.5 GHz

OIP3 - Third Order Intercept:: 35.5 dBm

Operating Supply Current:: 56 mA

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 105 C

Series:: QPL9503

Packaging:: Reel

Brand:: Qorvo

Number of Channels:: 1 Channel

Development Kit:: QPL9503EVB-01

Input Return Loss:: 10 dB

Product Type:: RF Amplifier

Factory Pack Quantity:: 100

Subcategory:: Wireless & RF Integrated Circuits

Tags: CMPA8, CMPA, CMP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CMPA801B025F Description

***i-Key: IC RF AMP 8.5GHZ-11GHZ 440208

***hardson RFPD: RF & MW POWER AMPLIFIER

CMPA801B025F More Information

GaN HEMT based MMICs: Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
CMPA801B025F DISTI # CMPA801B025F-ND	Wolfspeed	IC RF AMP 8.5GHZ-11GHZ 440208 RoHS: Compliant Min Qty: 1 Container: Tray	124In Stock	1:$414.1000
CMPA801B025F-TB DISTI # CMPA801B025F-TB-ND	Wolfspeed	IC RF AMP 8.5GHZ-11GHZ MODULE RoHS: Compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$715.0000
CMPA801B025F DISTI # 941-CMPA801B025F	Cree, Inc.	RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt RoHS: Compliant	12	1:$414.1000
CMPA801B025F-TB DISTI # 941-CMPA801B025F-TB	Cree, Inc.	RF Amplifier Test Board without GaN MMIC RoHS: Compliant	6	1:$715.0000
CMPA801B025F DISTI # CMPA801B025F	Wolfspeed	RF & MW POWER AMPLIFIER RoHS: Compliant	0	1:$414.1000

Image	Part #	Description
	Mfr.#: CMPA801B025F-TB OMO.#: OMO-CMPA801B025F-TB	RF Amplifier Test Board without GaN MMIC
	Mfr.#: AIML-0603-270K-T OMO.#: OMO-AIML-0603-270K-T	Fixed Inductors 27000nH, 1mA Tol.=+/-5%
	Mfr.#: AIML-0603-270K-T OMO.#: OMO-AIML-0603-270K-T-ABRACON	Fixed Inductors 27000nH, 1mA Tol.=+/-5%
	Mfr.#: CMPA801B025F-TB OMO.#: OMO-CMPA801B025F-TB-WOLFSPEED	IC RF AMP 8.5GHZ-11GHZ MODULE

CMPA801B025F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes