RS1E240GNTB

Mfr. #:: RS1E240GNTB
Manufacturer:: ROHM Semiconductor
Description:: MOSFET 4.5V Drive Nch MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: RS1E240GNTB Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: HSOP-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 24 A

Rds On - Drain-Source Resistance:: 3.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 23 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3 W

Configuration:: Single

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: ROHM Semiconductor

Forward Transconductance - Min:: 21.5 S

Fall Time:: 11.5 ns

Product Type:: MOSFET

Rise Time:: 7.8 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 47 ns

Typical Turn-On Delay Time:: 16.3 ns

Part # Aliases:: RS1E240GN

Unit Weight:: 0.002490 oz

Tags: RS1E24, RS1E2, RS1E, RS1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RS1E240GNTB Description

***et Japan: Transistor MOSFET N-CH 30V 72A 8-Pin HSOP Emboss T/R

***ical: Trans MOSFET N-CH 30V 24A Automotive 8-Pin HSOP EP T/R

***nell: MOSFET, N-CH, 30V, 72A, 150DEG C, 27W; Transistor Polarity: N Channel; Continuous Drain Current Id: 72A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 27W; Transistor Case Style: HSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***emi: N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ

***r Electronics: Power Field-Effect Transistor, 26A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

***emi: Single N-Channel Power MOSFET 30V, 71A, 4.2mΩ

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin WDFN T/R - Tape and Reel

***ure Electronics: MOSFET NFET U8FL 30V 71A 4.2MOHM

***r Electronics: Power Field-Effect Transistor, 71A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***enic: 30V 71A 3.4m´Î@10V30A 37W 2.2V@250uA 40pF@15V N Channel 1.683nF@15V 11.6nC@4.5V -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS

***ark: MOSFET S - SINGLE; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:71A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Power Dissipation:37W RoHS Compliant: Yes

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK 1212-8

***et: Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 T/R

***ment14 APAC: MOSFET, N CHANNEL, 30V, 30A, POWERPAK 12

***el Electronic: MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV

***S: French Electronic Distributor since 1988

***(Formerly Allied Electronics): Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 30A; 3.7mohm @ 10V; PowerPAK SO-8

***ure Electronics: N-Channel 30 V 60 A 5 W 3.7 mOhm Surface Mount Power Mosfet - PowerPAK® SO-8

***ark: MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature;RoHS Compliant: Yes

***ark: Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes

***(Formerly Allied Electronics): IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8

***p One Stop: Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***ure Electronics: N-Channel 30 V 3 mOhm OptiMOS3 Power-MOSFET - PG-TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

Part #	Mfg.	Description	Stock	Price
RS1E240GNTB DISTI # RS1E240GNTBCT-ND	ROHM Semiconductor	MOSFET N-CH 30V 24A 8-HSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15004In Stock	1000:$0.3510 500:$0.4388 100:$0.5551 10:$0.7240 1:$0.8200
RS1E240GNTB DISTI # RS1E240GNTBDKR-ND	ROHM Semiconductor	MOSFET N-CH 30V 24A 8-HSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15004In Stock	1000:$0.3510 500:$0.4388 100:$0.5551 10:$0.7240 1:$0.8200
RS1E240GNTB DISTI # RS1E240GNTBTR-ND	ROHM Semiconductor	MOSFET N-CH 30V 24A 8-HSOP RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	5000:$0.2982 2500:$0.3089
RS1E240GNTB DISTI # RS1E240GNTB	ROHM Semiconductor	4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E240GNTB) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3369 5000:$0.3159 10000:$0.2969 15000:$0.2809 25000:$0.2729
RS1E240GNTB DISTI # RS1E240GNTB	ROHM Semiconductor	4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE (Alt: RS1E240GNTB) RoHS: Compliant Min Qty: 2500	Asia - 0
RS1E240GNTB DISTI # 82AC3082	ROHM Semiconductor	MOSFET, N-CH, 30V, 72A, 150DEG C, 27W,Transistor Polarity:N Channel,Continuous Drain Current Id:72A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes	2490	1000:$0.3440 500:$0.3730 250:$0.4020 100:$0.4300 50:$0.5090 25:$0.5880 10:$0.6680 1:$0.7980
RS1E240GNTB DISTI # 755-RS1E240GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	3545	1:$0.7900 10:$0.6610 100:$0.4260 1000:$0.3410 2500:$0.2880 10000:$0.2770 25000:$0.2670
RS1E240GNTB	ROHM Semiconductor	POWER FIELD-EFFECT TRANSISTOR, 24A I(D), 30V, 0.0044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	1984	977:$0.7175 196:$0.8200 1:$2.0500
RS1E240GNTB			2646
RS1E240GNTB DISTI # 2965343	ROHM Semiconductor	MOSFET, N-CH, 30V, 72A, 150DEG C, 27W RoHS: Compliant	2490	500:$0.4660 250:$0.4940 100:$0.5360 25:$0.8510 5:$0.9360
RS1E240GNTB	ROHM Semiconductor		100	1:¥9.5175 100:¥5.3965 1250:¥3.4213 2500:¥2.5489
RS1E240GNTB	ROHM Semiconductor	RoHS(ship within 1day)	2480	1:$1.1400 10:$0.8500 50:$0.5700 100:$0.4600 500:$0.4300 1000:$0.4100
RS1E240GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	Americas -
RS1E240GNTB DISTI # 2965343	ROHM Semiconductor	MOSFET, N-CH, 30V, 72A, 150DEG C, 27W	2495	500:£0.2680 250:£0.2900 100:£0.3120 25:£0.4950 5:£0.5440

Image	Part #	Description
	Mfr.#: RBR5LAM40ATR OMO.#: OMO-RBR5LAM40ATR	Schottky Diodes & Rectifiers 40V Vr 5A Io Schottky Br Diode
	Mfr.#: 1861946 OMO.#: OMO-1861946	Fixed Terminal Blocks SPTAF 1/ 3-3,5-IL
	Mfr.#: LQM18PN1R0MFHD OMO.#: OMO-LQM18PN1R0MFHD	Fixed Inductors 1 UH 20%
	Mfr.#: C1005X7R1H103K050BE OMO.#: OMO-C1005X7R1H103K050BE	Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0402 50V 0.01uF X7R 10% T: 0.5mm
	Mfr.#: RBR5LAM40ATR OMO.#: OMO-RBR5LAM40ATR-ROHM-SEMI	DIODE SCHOTTKY 40V 5A PMDTM
	Mfr.#: LQM18PN1R0MFHD OMO.#: OMO-LQM18PN1R0MFHD-MURATA-ELECTRONICS	Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.3A 163mOhm DCR 0603 T/R
	Mfr.#: ERJ2RKD49R9X OMO.#: OMO-ERJ2RKD49R9X-1190	RES, 49R9, 0.5%, THICK FILM
	Mfr.#: C1005X7R1H103K050BE OMO.#: OMO-C1005X7R1H103K050BE-TDK	Cap Ceramic 0.01uF 50V X7R 10% Pad SMD 0402 FlexiTerm 125°C T/R
	Mfr.#: ERJ2RKD4703X OMO.#: OMO-ERJ2RKD4703X-433	Res Thick Film 0402 470K Ohm 0.5% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R

RS1E240GNTB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes