FQPF18N50V2

FQPF18N50V2
Mfr. #:
FQPF18N50V2
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 500V N-Ch QFET V2 Series
Lifecycle:
New from this manufacturer.
Datasheet:
FQPF18N50V2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
18 A
Rds On - Drain-Source Resistance:
225 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
16 S
Fall Time:
110 ns
Product Type:
MOSFET
Rise Time:
150 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
95 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
0.090478 oz
Tags
FQPF18N50V, FQPF18N5, FQPF18, FQPF1, FQPF, FQP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 500V 18A TO-220F
***ser
MOSFETs 500V N-Ch QFET V2 Series
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):265mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220F ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:18A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:72A; Power Dissipation:69W; Power, Pd:69W; Transistors, No. of:1; Voltage, Vds Max:500V
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):265mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; SVHC:No SVHC (15-Dec-2010); Current Id Max:18A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:69W; Power Dissipation Pd:69W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
FQPF18N50V2
DISTI # FQPF18N50V2-ND
ON SemiconductorMOSFET N-CH 500V 18A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    FQPF18N50V2
    DISTI # 512-FQPF18N50V2
    ON SemiconductorMOSFET 500V N-Ch QFET V2 Series
    RoHS: Compliant
    0
      FQPF18N50V2SDTU
      DISTI # 512-FQPF18N50V2SDTU
      ON SemiconductorMOSFET 500V/18A/.265ohm/NCH0
        FQPF18N50V2T
        DISTI # 512-FQPF18N50V2T
        ON SemiconductorMOSFET 200V N-Ch adv QFET V2 Series
        RoHS: Compliant
        0
          FQPF18N50V2SDTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Not Compliant
          4950
          • 1000:$1.4000
          • 500:$1.4700
          • 100:$1.5300
          • 25:$1.5900
          • 1:$1.7200
          FQPF18N50V2Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          1025
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            Availability
            Stock:
            Available
            On Order:
            5500
            Enter Quantity:
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