IRL3715SPBF

Mfr. #:: IRL3715SPBF
Manufacturer:: Infineon / IR
Description:: MOSFET 20V 1 N-CH HEXFET 14mOhms 11nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRL3715SPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRL3715SPBF Datasheet IRL3715SPBF Datasheet (P4-P6)IRL3715SPBF Datasheet (P7-P9)IRL3715SPBF Datasheet (P10-P12)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 54 A

Rds On - Drain-Source Resistance:: 20 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 11 nC

Pd - Power Dissipation:: 71 W

Configuration:: Single

Packaging:: Tube

Height:: 2.3 mm

Length:: 6.5 mm

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 3200

Subcategory:: MOSFETs

Part # Aliases:: SP001567086

Unit Weight:: 0.139332 oz

Tags: IRL3715S, IRL3715, IRL371, IRL37, IRL3, IRL

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRL3715SPBF Description

***ical: Trans MOSFET N-CH 20V 54A 3-Pin(2+Tab) D2PAK

***(Formerly Allied Electronics): MOSFET, 20V, 54A, 14 MOHM, 11 NC QG, LOGIC LEVEL, D2-PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

***nell: MOSFET, N, 20V, 54A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:54A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:210A; Power Dissipation:71W; Power, Pd:71W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Thermal Resistance, Junction to Case A:2.1°C/W; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:3V

***ineon SCT: 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***et: Trans MOSFET N-CH 20V 67A 3-Pin(2+Tab) D2PAK

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***nell: MOSFET, N, 20V, D2-PAK; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:77A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:D2-PAK; Termination Type:SMD; Base Number:3704; Current, Idm Pulse:308A; No. of Pins:3; Power Dissipation:87mW; Voltage, Vds Max:20V; Voltage, Vgs th Max:3V

***ineon SCT: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH 60V 43A Automotive 3-Pin(2+Tab) D2PAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Exhaust

***ment14 APAC: MOSFET, N CH, 60V, 43A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)

***p One Stop Global: Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Chip Resistor - Surface Mount 60.4Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 60.4 OHM 1% 1/10W 0402

***nell: TRANSISTOR, MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:30V; Current, Id Cont:48A; On State Resistance:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:SMD; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:TO-220

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***inecomponents.com: 30V,48A, 14 OHM NCH LOGIC LEVEL POWER TRENCH MOSFET

***et: TRANS MOSFET N-CH 30V 48A 3PIN TO-263AB

***ser: MOSFETs 30V N-Ch PowerTrench MOSFET

***el Electronic: Chip Resistor - Surface Mount 100Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 100 OHM 1% 1/10W 0603

*** Source Electronics: Trans MOSFET N-CH 20V 77A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 20V 77A D2PAK

***ernational Rectifier: 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***(Formerly Allied Electronics): MOSFET, 20V, 64A, 9 MOHM, 19 NC QG, D2-PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***i-Key: MOSFET N-CH 55V 60A D2PAK

***ser: MOSFETs 55V, 60a, 0.019 Ohm N-Channel

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

Market price

Part #	Mfg.	Description	Stock	Price
IRL3715SPBF DISTI # IRL3715SPBF-ND	Infineon Technologies AG	MOSFET N-CH 20V 54A D2PAK RoHS: Compliant Min Qty: 3200 Container: Tube	Limited Supply - Call
IRL3715SPBF DISTI # 70018542	Infineon Technologies AG	MOSFET,20V,54A,14 MOHM,11 NC QG,LOGIC LEVEL,D2-PAK RoHS: Compliant	0	3200:$0.8300
IRL3715SPBF DISTI # 8659850	Infineon Technologies AG	RoHS: Compliant	0	1000:$1.2800 500:$1.3800 250:$1.5500 100:$1.7400 10:$2.1400 1:$2.6000

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Availability

Stock:: Available
On Order:: 2500
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Current price of IRL3715SPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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IRL3715SPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes