IXFK24N100F

IXFK24N100F
Mfr. #:
IXFK24N100F
Manufacturer:
IXYS
Description:
MOSFET N-CH 1000V 24A TO264
Lifecycle:
New from this manufacturer.
Datasheet:
IXFK24N100F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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HTML Datasheet:
IXFK24N100F Datasheet
ECAD Model:
Product Attribute
Attribute Value
Tags
IXFK24N1, IXFK24N, IXFK24, IXFK2, IXFK, IXF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1000V 24A TO264
***ark
MOSFET, N, RF, TO-264; Transistor Type:MOSFET; Drain Source Voltage Vds:1000V; Continuous Drain Current Id:24A; Power Dissipation Max:560W; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Package / Case:TO-264; ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, RF, TO-264; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:24A; Power Dissipation Pd:560W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6600pF; On Resistance Rds(on):390mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:560W; Rise Time:18ns; Termination Type:Through Hole; Threshold Voltage Vgs:5.5V; Transistor Case Style:TO-264; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:1kV; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, RF, TO-264; Napięcie drenu / źródła Vds:1kV; Prąd ciągły Id drenu:24A; Straty mocy Pd:560W; Częstotliwość robocza, min.:-; Częstotliwość robocza, maks.:500kHz; Obudowa tranzystora RF:TO-264; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (12-Jan-2017); Biegunowość tranzystora:Kanał N; Czas narastania:18ns; Napięcie Vds, typ.:1kV; Napięcie Vgs pomiaru Rds on:10V; Napięcie progowe Vgs:5.5V; Rezystancja przewodzenia Rds(on):390mohm; Rodzaj obudowy tranzystora:TO-264; Rodzaj tranzystora:RF MOSFET; Straty mocy, maks.:560W; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Typowa pojemność Ciss Typ:6600pF; Zakres temperatury roboczej:-55°C do +150°C
Part # Mfg. Description Stock Price
IXFK24N100F
DISTI # IXFK24N100F-ND
IXYS CorporationMOSFET N-CH 1000V 24A TO264
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IXFK24N100F
    DISTI # 747-IXFK24N100F
    IXYS CorporationMOSFET IXFK24N100F 24A 1000V F-Class HiPerRF Capable MOSFET
    RoHS: Compliant
    0
      IXFK24N100F
      DISTI # 1347759
      IXYS CorporationMOSFET, N, RF, TO-264
      RoHS: Compliant
      0
      • 25:$48.4400
      • 1:$56.9800
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      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of IXFK24N100F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $42.32
      $42.32
      10
      $40.20
      $401.99
      100
      $38.08
      $3 808.35
      500
      $35.97
      $17 983.90
      1000
      $33.85
      $33 852.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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