CMF10120D

CMF10120D
Mfr. #:
CMF10120D
Manufacturer:
N/A
Description:
MOSFET N-CH 1200V 24A TO247
Lifecycle:
New from this manufacturer.
Datasheet:
CMF10120D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Cree Inc.
Product Category
FETs - Single
Series
Z-FET
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Package-Case
TO-247-3
Technology
SiC
Operating-Temperature
-55°C ~ 135°C (TJ)
Mounting-Type
Through Hole
Number-of-Channels
1 Channel
Supplier-Device-Package
TO-247
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
134W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
1200V (1.2kV)
Input-Capacitance-Ciss-Vds
928pF @ 800V
FET-Feature
Silicon Carbide (SiC)
Current-Continuous-Drain-Id-25°C
24A (Tc)
Rds-On-Max-Id-Vgs
220 mOhm @ 10A, 20V
Vgs-th-Max-Id
4V @ 500μA
Gate-Charge-Qg-Vgs
47.1nC @ 20V
Pd-Power-Dissipation
152 W
Maximum-Operating-Temperature
+ 135 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
21 ns
Rise-Time
34 ns
Vgs-Gate-Source-Voltage
25 V
Id-Continuous-Drain-Current
24 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Resistance
160 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
38 ns
Typical-Turn-On-Delay-Time
8.8 ns
Qg-Gate-Charge
47.1 nC
Forward-Transconductance-Min
3.7 S 3.4 S
Channel-Mode
Enhancement
Tags
CMF101, CMF10, CMF1, CMF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 24A 3-Pin(3+Tab) TO-247
***ark
N Channel, Sic Power Mosfet, 1200V, 24A, To247-3
***hardson RFPD
SILICON CARBIDE POWER TRANSISTORS/MODULES
***ment14 APAC
MOSFET, SIC, N CH, 1200V, 24A, TO247
***i-Key
MOSFET N-CH 1200V 24A TO247
***nell
MOSFET, SIC, N CH, 1200V, 24A, TO247; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:24A; Napięcie drenu / źródła Vds:1.2kV; Rezystancja przewodzenia Rds(on):0.16ohm; Napięcie Vgs pomiaru Rds(on):20V; Napięcie progowe Vgs:2.5V; Straty mocy Pd:152W; Rodzaj obudowy tranzystora:TO-247; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:125°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Temperatura robocza, min.:-55°C; Zakres temperatury roboczej:-55°C do +125°C
Part # Mfg. Description Stock Price
CMF10120D
DISTI # V36:1790_07432834
Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 24A 3-Pin(3+Tab) TO-247
RoHS: Compliant
6995
  • 100:$22.2100
  • 25:$23.2800
  • 10:$24.6600
  • 1:$26.1000
CMF10120D
DISTI # CMF10120D-ND
WolfspeedMOSFET N-CH 1200V 24A TO247
RoHS: Compliant
Min Qty: 600
Container: Tube
Limited Supply - Call
    CMF10120D
    DISTI # 25978305
    Cree, Inc.Trans MOSFET N-CH SiC 1.2KV 24A 3-Pin(3+Tab) TO-247
    RoHS: Compliant
    6995
    • 1:$26.1000
    CMF10120D
    DISTI # 941-CMF10120D
    Cree, Inc.MOSFET ZFET 1X10A IDS 1200V ON 160MOHM SIC MOSFT
    RoHS: Compliant
    0
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      Availability
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      On Order:
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      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $33.32
      $33.32
      10
      $31.65
      $316.49
      100
      $29.98
      $2 998.35
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      $28.32
      $14 158.90
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      $26.65
      $26 652.00
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