FQN1N50CTA

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

380 mA

Rds On - Drain-Source Resistance:

4.6 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

890 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Ammo Pack

Height:

5.33 mm

Length:

5.2 mm

Product:

MOSFET Small Signal

Series:

FQN1N50C

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

4.19 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

0.6 S

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

10 ns

Unit Weight:

0.008466 oz

Tags

FQN1N5, FQN1, FQN