EPC2021

Mfr. #:: EPC2021
Manufacturer:: EPC
Description:: GANFET TRANS 80V 90A BUMPED DIE
Lifecycle:: New from this manufacturer.
Datasheet:: EPC2021 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: EPC202, EPC20, EPC2, EPC

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

EPC2021 Description

*** Stop Electro: Power Field-Effect Transistor, 60A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET

*** Electronics: GANFET TRANS 80V 90A BUMPED DIE

***ure Electronics: FDB86360 Series 80 V 110 A 1.8 mOhm N-Ch Power Trench Mosfet - D²PAK (TO-263AB)

***emi: N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ

***et Europe: Trans MOSFET N-CH 80V 110A 3-Pin TO-263 T/R

***ark: NMOS D2PAK 80V 1.8 MOHM / REEL ROHS COMPLIANT: YES

*** Electronic Components: MOSFET N-Channel Power Trench MOSFET

***r Electronics: Power Field-Effect Transistor, 110A I(D), 80V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***enic: 80V 110A 1.5m´Î@10V80A 333W 3V@250uA 370pF@25V N Channel 14.6nF@25V 207nC@0~10V -55¡Í~+175¡Í@(Tj) TO-263 MOSFETs ROHS

***ical: Trans MOSFET N-CH 80V 110A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET, 80V, 110A, 2.4mΩ

***ure Electronics: N-Channel 80 V 110 A 2.4 mOhm Surface Mount PowerTrench Mosfet TO-263AB

***nell: MOSFET, AEC-Q101, NCH, 110A, 80V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: Power Trench FDD Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Power Field-Effect Transistor, 110A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 25mOhms 0603 (1608 Metric) ±1% ±250ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES 0.025 OHM 1% 1/3W 0603

***Yang: Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled

***ure Electronics: Single N-Channel 80 V 3 mOhm 61 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:80V; On Resistance

***ark: MOSFET, N-CH, 80V, 100A, 150DEG C, 139W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***Yang: Trans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R - Product that comes on tape, but is not reeled

***ure Electronics: BSC026N08NS5 Series 80 V 23 A OptiMOSTM5 Power-Transistor - PG-TDSON-8

***el Electronic: 0805 0.1 uF 50V ±10 % Tolerance X7R Surface Mount Multilayer Ceramic Capacitor

***ment14 APAC: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:80V; On Resistance

***ark: MOSFET, N-CH, 80V, 100A, 150DEG C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 156W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ical: Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ

***r Electronics: Power Field-Effect Transistor, 110A I(D), 60V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***sible Micro: Transistor, Power MOSFET, N-Channel, 80V, 100A, 114W, TDSON8

***ark: MOSFET, N-CH, 80V, 100A, 150DEG C, 114W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 114W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

Market price

Part #	Mfg.	Description	Stock	Price
EPC2021 DISTI # 917-1089-1-ND	Efficient Power Conversion	GANFET TRANS 80V 90A BUMPED DIE RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3323In Stock	250:$5.8168 100:$6.3301 25:$7.0144 10:$7.6990 1:$8.5500
EPC2021 DISTI # 917-1089-6-ND	Efficient Power Conversion	GANFET TRANS 80V 90A BUMPED DIE RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3323In Stock	250:$5.8168 100:$6.3301 25:$7.0144 10:$7.6990 1:$8.5500
EPC2021 DISTI # 917-1089-2-ND	Efficient Power Conversion	GANFET TRANS 80V 90A BUMPED DIE RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	3000In Stock	500:$5.1491
EPC9203 DISTI # 917-1096-ND	Efficient Power Conversion	DEMO CIRCUIT FOR EPC2021 80V RoHS: Compliant Min Qty: 1 Container: Bulk	148In Stock	1:$45.6300
EPC9034 DISTI # 917-1058-ND	Efficient Power Conversion	BOARD DEV FOR EPC2021 80V EGAN RoHS: Compliant Min Qty: 1 Container: Bulk	42In Stock	1:$90.0000
EPC9115 DISTI # 917-1095-ND	Efficient Power Conversion	EVAL BOARD GAN EPC2020/EPC2021 RoHS: Compliant Min Qty: 1 Container: Bulk	15In Stock	1:$780.0000
EPC9118 DISTI # 917-1073-ND	Efficient Power Conversion	EVAL BOARD EGAN FET RoHS: Compliant Min Qty: 1 Container: Bulk	14In Stock	1:$215.6300
EPC9019 DISTI # 917-1068-ND	Efficient Power Conversion	BOARD DEV EPC2001/21 EGAN RoHS: Compliant Min Qty: 1 Container: Bulk	Temporarily Out of Stock	1:$118.7500

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	Mfr.#: EPC11LC20 OMO.#: OMO-EPC11LC20-1190	New and Original
	Mfr.#: EPC1213DM8 OMO.#: OMO-EPC1213DM8-1190	Configuration Memory, 26KX8, Serial, CMOS, CDIP8
	Mfr.#: EPC3256AQC208-10 OMO.#: OMO-EPC3256AQC208-10-1190	New and Original
	Mfr.#: EPC64SI16N OMO.#: OMO-EPC64SI16N-1190	New and Original
	Mfr.#: EPCOS3750 OMO.#: OMO-EPCOS3750-1190	New and Original

EPC2021

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes