BSH112,235

Mfr. #:: BSH112,235
Manufacturer:: NXP Semiconductors
Description:: MOSFET N-CH 60V 300MA SOT-23
Lifecycle:: New from this manufacturer.
Datasheet:: BSH112,235 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: BSH112,235 more Information BSH112,235 Product Details

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Tags: BSH112, BSH11, BSH1, BSH

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BSH112,235 Description

***et: Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R

***S: MOSFET N-CH 60V 300MA 830mW SOT-23-3 Pb-Free

***ponent Stockers USA: 300 mA 60 V N-CHANNEL Si SMALL SIGNAL MOSFET TO-236AB

*** Americas: N-channel enhancement mode field-effect transistor

***peria: BSH112 - N-channel TrenchMOS intermediate level FET

***nell: MOSFET, N CH, 60V, 300MA, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 300mA; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 75V; Voltage Vgs Max: 2V; Voltage Vgs Rds on Measurement: 10V

*** Electronics: DIODES INC. - 2N7002K-7 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V

***ure Electronics: 2N7002K Series 60 V 2 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 60V 0.38A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, N CH, 60V, 0.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:60V; On Resistance

***ark: MOSFET, N CHANNEL, 60 V, 800mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

***nell: MOSFET, N CH, 60V, 0.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: DMN65D8L: 60 V 3 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3

*** Source Electronics: MOSFET N-CH 60V 310MA SOT23 / Trans MOSFET N-CH 60V 0.31A 3-Pin SOT-23 T/R

***nell: MOSFET, N-CH, 20V, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 310mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 370mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 115mA, 10V 310mA Ta -55°C~150°C TJ MOSFET N-CH 60V 310MA SOT23

***ure Electronics: N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3

***Yang: Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R - Tape and Reel

***ment14 APAC: MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:50V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W

***nell: MOSFET, N CH, 50V, 0.2A, SOT23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 200mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V

***eco: Trans MOSFET N Channel 50 Volt 0.22A 3-Pin SOT-23 Tape and Reel

***emi: N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA

***et: Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R

***enic: 50V 220mA 3.5¦¸@10V,220mA 360mW 1.5V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***th Star Micro: These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360

***et Japan: Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

***ark: MOSFET IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:0.28A; On Resistance, Rds(on):7.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-SOT-23 ;RoHS Compliant: Yes

***ineon: Summary of Features: Enhancement mode; Avalanche rated; Normal level, logic level, super logic level or ultra logic level; V GS(th) = 2.1 ... 4.0V; Pb-free lead plating; RoHS compliant | Target Applications: Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 500

***rchild Semiconductor: This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:200mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:280mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance @ Vgs = 4.5V:5.3ohm; On State resistance @ Vgs = 10V:5ohm; Package / Case:SOT-23; Power Dissipation Pd:200mW; Power Dissipation Pd:200mW; Pulse Current Idm:800mA; SMD Marking:702; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

***Yang: Transistor: N-MOSFET, unipolar, 100V, 0.17A, 6ohm, 225mW, -55+150 deg.C, SMD, SOT23, AEC-Q1

***th Star Micro: BSS123L: Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23

***(Formerly Allied Electronics): MOSFET; Power; N-Ch; VDSS 100VDC; 5 Ohms; 0.17A; SOT-23; PD 225mW; 3k Reel

***ure Electronics: N-Channel 100 V 6 Ohm 225 mW Surface Mount Power MOSFET - SOT-23

***emi: Power MOSFET 170 mA, 100 V, N-Channel SOT-23

***ical: Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

***enic: 100V 170mA 225mW 6´Î@10V100mA 2.8V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ark: N CHANNEL, MOSFET, 100V, 170mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10VDC; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Market price

Part #	Mfg.	Description	Stock	Price
BSH112,235 DISTI # 568-1768-2-ND	NXP Semiconductors	MOSFET N-CH 60V 300MA SOT-23 RoHS: Compliant Min Qty: 20000 Container: Tape & Reel (TR)	Limited Supply - Call
BSH112,235 DISTI # 568-1768-1-ND	NXP Semiconductors	MOSFET N-CH 60V 300MA SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSH112,235 DISTI # 568-1768-6-ND	NXP Semiconductors	MOSFET N-CH 60V 300MA SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSH112235	NXP Semiconductors	Now Nexperia BSH112 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB RoHS: Not Compliant	4000	1:$0.0300 25:$0.0300 100:$0.0300 500:$0.0300 1000:$0.0300
BSH112,235 DISTI # 771-BSH112/T3	Nexperia	MOSFET TAPE13 PWR-MO RoHS: Compliant	0
BSH112,235	NXP Semiconductors		1263

Image	Part #	Description
	Mfr.#: BSH111 PB OMO.#: OMO-BSH111-PB-1190	New and Original
	Mfr.#: BSH111,125 OMO.#: OMO-BSH111-125-1190	New and Original
	Mfr.#: BSH111,235 OMO.#: OMO-BSH111-235-NEXPERIA	MOSFET N-CH 55V 0.335A SOT23
	Mfr.#: BSH111235 OMO.#: OMO-BSH111235-1190	New and Original
	Mfr.#: BSH112T3 OMO.#: OMO-BSH112T3-1190	New and Original
	Mfr.#: BSH114 OMO.#: OMO-BSH114-1190	Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
	Mfr.#: BSH114 , TDZGTR27 , J40 OMO.#: OMO-BSH114-TDZGTR27-J40-1190	New and Original
	Mfr.#: BSH114215 OMO.#: OMO-BSH114215-1190	Now Nexperia BSH114 - Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
	Mfr.#: BSH111BKR-CUT TAPE OMO.#: OMO-BSH111BKR-CUT-TAPE-1190	New and Original
	Mfr.#: BSH114,215-CUT TAPE OMO.#: OMO-BSH114-215-CUT-TAPE-1190	New and Original

BSH112,235

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes