2N4339-E3

2N4339-E3
Mfr. #:
2N4339-E3
Manufacturer:
Vishay Semiconductors
Description:
JFET RECOMMENDED ALT 106-2N4339
Lifecycle:
New from this manufacturer.
Datasheet:
2N4339-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N4339-E3 Datasheet2N4339-E3 Datasheet (P4-P6)2N4339-E3 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
JFET
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
TO-206AA
Transistor Polarity:
N-Channel
Configuration:
Single
Vgs - Gate-Source Breakdown Voltage:
- 50 V
Packaging:
Bulk
Type:
JFET
Brand:
Vishay Semiconductors
Factory Pack Quantity:
200
Tags
2N4339, 2N433, 2N43, 2N4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-CHANNEL JFET AMPLIFIER; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 50V 1.5MA TO-206AA
***et
Trans JFET N-CH 2-Pin TO-206AA
***ser
N-Channel FETs 50V 1.5mA
***nell
N CHANNEL JFET, -57V, TO-206AA
***
TO18 NCH JFET
***ment14 APAC
N CHANNEL JFET, -57V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:-57V; Gate-Source Cutoff Voltage Vgs(off) Max:-1.8V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +175°C; No. of Pins:3
Part # Mfg. Description Stock Price
2N4339-E3
DISTI # 2N4339-E3-ND
Vishay SiliconixMOSFET N-CH 50V 1.5MA TO-206AA
RoHS: Compliant
Min Qty: 200
Container: Bulk
Limited Supply - Call
    2N4339-E3
    DISTI # 06J8862
    Vishay IntertechnologiesN CHANNEL JFET, -57V, TO-206AA,Breakdown Voltage Vbr:-57V,Zero Gate Voltage Drain Current Idss Min:500µA,Zero Gate Voltage Drain Current Idss Max:1.5mA,Gate-Source Cutoff Voltage Vgs(off) Max:-1.8V,Transistor Type:JFET , RoHS Compliant: Yes0
      2N4339-E3
      DISTI # 781-2N4339-E3
      Vishay IntertechnologiesJFET 50V 1.5mA
      RoHS: Compliant
      0
        2N4339
        DISTI # 781-2N4339
        Vishay IntertechnologiesJFET 50V 1.5mA
        RoHS: Not compliant
        0
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          INSTOCK
          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
          Current price of 2N4339-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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