A3I35D025WNR1

Mfr. #:: A3I35D025WNR1
Manufacturer:: NXP Semiconductors
Description:: RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
Lifecycle:: New from this manufacturer.
Datasheet:: A3I35D025WNR1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: A3I35D025WNR1 more Information A3I35D025WNR1 Product Details

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF Amplifier

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: TO-270WB-17

Type:: Wideband

Operating Frequency:: 3200 MHz to 4000 MHz

Gain:: 28.9 dB

Operating Supply Voltage:: 28 V

Test Frequency:: 3800 MHz

Operating Supply Current:: 260 mA

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Series:: A3I35D025

Packaging:: Reel

Brand:: NXP Semiconductors

Number of Channels:: 2 Channel

Moisture Sensitive:: Yes

Product Type:: RF Amplifier

Factory Pack Quantity:: 500

Subcategory:: Wireless & RF Integrated Circuits

Part # Aliases:: 935373852528

Tags: A3I35D02, A3I3, A3I

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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A3I35D025WNR1 More Information

RF High-Power Wideband Drivers: NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

Market price

Part #	Mfg.	Description	Stock	Price
A3I35D025WNR1 DISTI # V36:1790_21814491	NXP Semiconductors	Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V	0	500000:$27.4800 250000:$27.4900 50000:$32.4300 5000:$45.8600 500:$48.4400
A3I35D025WNR1 DISTI # A3I35D025WNR1	Avnet, Inc.	RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Europe - 0	5000:€26.8900 3000:€28.8900 2000:€31.0900 1000:€32.2900 500:€33.6900
A3I35D025WNR1 DISTI # A3I35D025WNR1	Avnet, Inc.	RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R - Tape and Reel (Alt: A3I35D025WNR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	5000:$28.7900 3000:$29.3900 2000:$30.4900 1000:$31.6900 500:$32.9900
A3I35D025WNR1 DISTI # 65AC3711	NXP Semiconductors	AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER, 3200-4000 MHZ, 3.4 W AVG., 28 V TR	0	250:$29.4800 100:$30.3800 50:$31.0600 25:$33.3300 10:$35.3700 5:$37.6400 1:$39.6800
A3I35D025WNR1 DISTI # 771-A3I35D025WNR1	NXP Semiconductors	RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V RoHS: Compliant	490	1:$48.4400 5:$45.8300 10:$45.1700 25:$41.9000 50:$40.5500 100:$39.2800 250:$34.0100 500:$33.1700
A3I35D025WNR1 DISTI # A3I35D025WNR1	NXP Semiconductors	RF & MW POWER AMPLIFIER RoHS: Compliant	0	500:$38.5400

A3I35D025WNR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes