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IPD80R280P7ATMA1

IPD80R280P7ATMA1
Mfr. #:
IPD80R280P7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPD80R280P7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD80R280P7ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
280 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
36 nC
Minimum Operating Temperature:
- 50 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
101 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS P7
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPD80R280P7 SP001422596
Unit Weight:
0.011993 oz
Tags
IPD80R28, IPD80R2, IPD80R, IPD80, IPD8, IPD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 0.28 Ohm 36 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 800V, 17A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.24Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Part # Mfg. Description Stock Price
IPD80R280P7ATMA1
DISTI # V72:2272_16563309		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) DPAK T/R349
  • 250:$1.6373
  • 100:$1.8574
  • 25:$2.2667
  • 10:$2.2708
  • 1:$2.6196
IPD80R280P7ATMA1
DISTI # V36:1790_16563309		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) DPAK T/R0
    IPD80R280P7ATMA1
    DISTI # IPD80R280P7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 800V 17A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3105In Stock
    • 1000:$1.5554
    • 500:$1.8443
    • 100:$2.2776
    • 10:$2.7780
    • 1:$3.1100
    IPD80R280P7ATMA1
    DISTI # IPD80R280P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 800V 17A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3105In Stock
    • 1000:$1.5554
    • 500:$1.8443
    • 100:$2.2776
    • 10:$2.7780
    • 1:$3.1100
    IPD80R280P7ATMA1
    DISTI # IPD80R280P7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 800V 17A TO252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		2500In Stock
    • 2500:$1.4562
    IPD80R280P7ATMA1
    DISTI # 31593572    		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) DPAK T/R2500
    • 2500:$1.3979
    IPD80R280P7ATMA1
    DISTI # 29553649    		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin(2+Tab) DPAK T/R349
    • 250:$1.7601
    • 100:$1.9967
    • 25:$2.4367
    • 10:$2.4411
    • 6:$2.8161
    IPD80R280P7
    DISTI # IPD80R280P7ATMA1    		Infineon Technologies AGTrans MOSFET N 800V 17A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R280P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 17500
    • 2500:$1.3900
    • 5000:$1.2900
    • 10000:$1.2900
    • 15000:$1.1900
    • 25000:$1.1900
    IPD80R280P7ATMA1
    DISTI # SP001422596    		Infineon Technologies AGTrans MOSFET N-CH 800V 17A 3-Pin TO-252 T/R (Alt: SP001422596)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€1.6329
    • 5000:€1.3599
    • 10000:€1.2559
    • 15000:€1.1659
    • 25000:€1.0879
    IPD80R280P7ATMA1
    DISTI # 16AC3361    		Infineon Technologies AGMOSFET, N-CH, 800V, 17A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.24ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes4284
    • 1000:$1.4200
    • 500:$1.7100
    • 250:$1.8400
    • 100:$1.9600
    • 50:$2.1200
    • 25:$2.2900
    • 10:$2.4500
    • 1:$2.8800
    IPD80R280P7ATMA1Infineon Technologies AGSingle N-Channel 800 V 0.28 Ohm 36 nC CoolMOS Power Mosfet - DPAK
    RoHS: Compliant    		7500Reel
    • 2500:$1.4000
    IPD80R280P7ATMA1
    DISTI # 726-IPD80R280P7ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		3630
    • 1:$2.8800
    • 10:$2.4500
    • 100:$1.9600
    • 500:$1.7100
    • 1000:$1.4200
    • 2500:$1.3200
    • 5000:$1.2700
    IPD80R280P7ATMA1
    DISTI # IPD80R280P7    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,10.6A,101W,PG-TO252-3496
    • 1:$3.5300
    • 5:$3.1800
    • 25:$2.8100
    • 100:$2.5400
    • 500:$2.3500
    IPD80R280P7ATMA1
    DISTI # 2750415    		Infineon Technologies AGMOSFET, N-CH, 800V, 17A, TO-252
    RoHS: Compliant    		4284
    • 1000:$2.3100
    • 500:$2.7400
    • 100:$3.3900
    • 10:$4.1300
    • 1:$4.6200
    IPD80R280P7ATMA1
    DISTI # XSFP00000020659    		Infineon Technologies AGPower Field-Effect Transistor,80AI(D),40V,0.0052ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
    RoHS: Compliant    		7500 in Stock0 on Order
    • 7500:$1.5600
    • 2500:$1.6500
    IPD80R280P7ATMA1
    DISTI # 2750415    		Infineon Technologies AGMOSFET, N-CH, 800V, 17A, TO-252
    RoHS: Compliant    		4306
    • 500:£1.3600
    • 250:£1.4600
    • 100:£1.5500
    • 10:£1.9500
    • 1:£2.5800
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    Availability
    Stock:
    Available
    On Order:
    1986
    Enter Quantity:
    Current price of IPD80R280P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.88
    $2.88
    10
    $2.45
    $24.50
    100
    $1.96
    $196.00
    500
    $1.71
    $855.00
    1000
    $1.42
    $1 420.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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