QS8M31TR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSMT-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

3 A, 2 A

Rds On - Drain-Source Resistance:

112 mOhms, 210 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

4 nC, 7.2 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.5 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel, 1 P-Channel

Brand:

ROHM Semiconductor

Fall Time:

7 ns, 10 ns

Product Type:

MOSFET

Rise Time:

15 ns, 12 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

26 ns, 45 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

QS8M31

Tags

QS8M31, QS8M3, QS8M, QS8