IPN60R2K1CEATMA1

IPN60R2K1CEATMA1
Mfr. #:
IPN60R2K1CEATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPN60R2K1CEATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPN60R2K1CEATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-223-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
3.7 A
Rds On - Drain-Source Resistance:
4.91 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
6.7 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
1.6 mm
Length:
6.5 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
3.5 mm
Brand:
Infineon Technologies
Fall Time:
50 ns
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
7 ns
Part # Aliases:
IPN60R2K1CE SP001434886
Unit Weight:
0.008818 oz
Tags
IPN60R2, IPN60, IPN6, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
***ark
Mosfet, N-Ch, 600V, 3.7A, Sot-223-3; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.89Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Part # Mfg. Description Stock Price
IPN60R2K1CEATMA1
DISTI # 33943948
Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
9000
  • 3000:$0.1370
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1CT-ND
Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
25In Stock
  • 1000:$0.2011
  • 500:$0.2603
  • 100:$0.3313
  • 10:$0.4440
  • 1:$0.5200
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1DKR-ND
Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
25In Stock
  • 1000:$0.2011
  • 500:$0.2603
  • 100:$0.3313
  • 10:$0.4440
  • 1:$0.5200
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1TR-ND
Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 30000:$0.1470
  • 15000:$0.1551
  • 6000:$0.1666
  • 3000:$0.1781
IPN60R2K1CEATMA1
DISTI # V72:2272_14663636
Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
0
    IPN60R2K1CEATMA1
    DISTI # V36:1790_14663636
    Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
    RoHS: Compliant
    0
    • 3000000:$0.1274
    • 1500000:$0.1277
    • 300000:$0.1447
    • 30000:$0.1733
    • 3000:$0.1781
    IPN60R2K1CEATMA1
    DISTI # IPN60R2K1CEATMA1
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN60R2K1CEATMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1389
    • 18000:$0.1409
    • 12000:$0.1459
    • 6000:$0.1509
    • 3000:$0.1569
    IPN60R2K1CEATMA1
    DISTI # IPN60R2K1CE
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: IPN60R2K1CE)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
    • 150000:$0.1385
    • 75000:$0.1403
    • 30000:$0.1421
    • 15000:$0.1439
    • 9000:$0.1478
    • 6000:$0.1519
    • 3000:$0.1563
    IPN60R2K1CEATMA1
    DISTI # SP001434886
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: SP001434886)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.1299
    • 18000:€0.1399
    • 12000:€0.1649
    • 6000:€0.2019
    • 3000:€0.2599
    IPN60R2K1CEATMA1
    DISTI # 97Y1834
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 97Y1834)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
      IPN60R2K1CEATMA1
      DISTI # 97Y1834
      Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.89ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1975
      • 1000:$0.2070
      • 500:$0.2270
      • 250:$0.2480
      • 100:$0.2670
      • 50:$0.3250
      • 25:$0.3820
      • 10:$0.4390
      • 1:$0.5230
      IPN60R2K1CEATMA1
      DISTI # 726-IPN60R2K1CEATMA1
      Infineon Technologies AGMOSFET CONSUMER
      RoHS: Compliant
      26012
      • 1:$0.4700
      • 10:$0.3950
      • 100:$0.2410
      • 1000:$0.1860
      • 3000:$0.1590
      IPN60R2K1CEATMA1
      DISTI # 1300919P
      Infineon Technologies AGMOSFET N-CH 600V 5.9A COOLMOS CE SOT-223, RL5525
      • 2500:£0.1200
      • 1000:£0.1340
      • 500:£0.1540
      • 125:£0.1790
      IPN60R2K1CEATMA1
      DISTI # 2617449
      Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3
      RoHS: Compliant
      520
      • 1000:$0.3040
      • 500:$0.3930
      • 100:$0.5000
      • 10:$0.6690
      • 1:$0.7800
      IPN60R2K1CEATMA1
      DISTI # 2617449
      Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3525
      • 500:£0.1430
      • 250:£0.1640
      • 100:£0.1850
      • 25:£0.3270
      • 5:£0.3450
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      Availability
      Stock:
      55
      On Order:
      2038
      Enter Quantity:
      Current price of IPN60R2K1CEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.47
      $0.47
      10
      $0.40
      $3.95
      100
      $0.24
      $24.10
      1000
      $0.19
      $186.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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