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FCP190N60E

FCP190N60E
Mfr. #:
FCP190N60E
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 600V N-CHAN MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FCP190N60E Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FCP190N60E more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
20.6 A
Rds On - Drain-Source Resistance:
190 mOhms
Qg - Gate Charge:
63 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
208 W
Configuration:
Single
Tradename:
SuperFET II
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FCP190N60E
Transistor Type:
1 N-Channel
Type:
600 V N-Channel MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
15 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
101 ns
Typical Turn-On Delay Time:
23 ns
Unit Weight:
0.063493 oz
Tags
FCP190N60, FCP190, FCP19, FCP1, FCP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**i
    E**i
    ES

    Ok, waiting to prove it.

    2019-06-19
    D***v
    D***v
    RU

    Works fine

    2019-06-21
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220
***Components
In a Pack of 2, N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 ON Semiconductor FCP190N60E
***ure Electronics
Single N-Channel 600 V 0.19 Ohm 82 nC 208 W Silicon Flange Mount Mosfet TO-220-3
***p One Stop Global
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 600V, 20.6A, TO-220
***i-Key
MOSFET N-CH 600V TO-220-3
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
Part # Mfg. Description Stock Price
FCP190N60E
DISTI # V99:2348_06359354		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 8000000:$1.2610
  • 80000:$1.4240
  • 800:$1.7330
FCP190N60E
DISTI # FCP190N60E-ND		ON SemiconductorMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.7325
FCP190N60E
DISTI # 31262210		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 5:$1.7330
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.1900
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.2900
  • 1000:€1.2900
FCP190N60E
DISTI # 512-FCP190N60E		ON SemiconductorMOSFET 600V N-CHAN MOSFET
RoHS: Compliant		0
  • 1:$2.7800
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
FCP190N60E
DISTI # 7729102P		ON SemiconductorMOSFET N-CH 600V 20A SUPERFET-II TO220, TU10
  • 20:£1.3700
FCP190N60EON Semiconductor600 V N-CHANNEL MOSFET
RoHS: Compliant		Europe - 400
    FCP190N60E
    DISTI # C1S541901518194    		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		800
    • 800:$1.7330
    FCP190N60E
    DISTI # 2254234    		ON SemiconductorMOSFET, N-CH, 600V, 20.6A, TO-220
    RoHS: Compliant    		0
    • 1:£2.8400
    • 25:£2.5600
    • 100:£2.4100
    • 250:£2.2800
    • 500:£2.1000
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    Availability
    Stock:
    255
    On Order:
    2238
    Enter Quantity:
    Current price of FCP190N60E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.69
    $2.69
    10
    $2.28
    $22.80
    100
    $1.83
    $183.00
    500
    $1.60
    $800.00
    1000
    $1.32
    $1 320.00
    2500
    $1.31
    $3 275.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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