DMN3070SSN-7

Mfr. #:: DMN3070SSN-7
Manufacturer:: Diodes Incorporated
Description:: MOSFET 30V N-CH MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: DMN3070SSN-7 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN3070SSN-7 Datasheet DMN3070SSN-7 Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SC-59-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 4.2 A

Rds On - Drain-Source Resistance:: 24 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 13.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 780 mW

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Series:: DMN3070

Transistor Type:: 1 N-Channel

Brand:: Diodes Incorporated

Fall Time:: 4.1 ns

Product Type:: MOSFET

Rise Time:: 20.1 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 4.4 ns

Typical Turn-On Delay Time:: 4.3 ns

Unit Weight:: 0.000282 oz

Tags: DMN307, DMN30, DMN3, DMN

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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DMN3070SSN-7 Description

***ure Electronics: Single N-Channel 30 V 50 mOhm 6 nC 0.78 W Silicon Surface Mount Mosfet - SOT-23

***ark: Mosfet, N-Ch, 30V, 4.2A, Sc-59 Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ure Electronics: DMG3406L Series 30 V 3.6 A 50 mOhm 0.77 W 11.2 nC N-Channel MOSFET - SOT-23

***et: Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R

***ark: MOSFET, N-CH, 30V, 3.6A, SOT-23 ROHS COMPLIANT: YES

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***Yang: Transistor: N-MOSFET, unipolar, 30V, 5A, 29ohm, 1.3W, -55+150 deg.C, SMD, SOT23

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single N-Channel 30 V 37 mOhm 6.8 nC HEXFET® Power Mosfet - SOT-23

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***et: Trans MOSFET N-CH 30V 5A 3-Pin SOT-23 T/R

***ark: N CH MOSFET, 30V, 5A, 3-SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; No. of Pins:3 ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***ure Electronics: DMP3099L Series 30 V 3.8 A P-Channel Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, AEC-Q101, P-CH, -3.8A, -30V; Transistor Polarity: P Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 3.8A; On Resistance Rds(on): 0.065ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V

***Yang: Transistor: N-MOSFET, unipolar, 30V, 5.3A, 27ohm, 1.3W, -55+150 deg.C, SMD, SOT23

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

*** Source Electronics: MOSFET N-CH 30V 5.3A SOT-23-3 / Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R

***ure Electronics: Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

*** Stop Electro: Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.3A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N CH, 30V, 5.3A, SOT23-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 98Milliohms;ID -3A;Micro3;PD 1.25W;-55degc

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***el Electronic: Surface Mount Ceramic Multilayer Capacitor 0.0022uF 10% X7R 100V 0805 Paper T/R

***ure Electronics: Single P-Channel 30 V 165 mOhm 14 nC HEXFET® Power Mosfet - MICRO-3

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On Resistance, Rds(on):98mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:Micro3 ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; Low Profile (less than 1.1mm); P-Channel MOSFET; SOT-23 Footprint | Target Applications: DC Switches; Load Switch

***nell: MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 1.25W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 24A; SMD Marking: 1H; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vgs th Max: -2.5V

***ure Electronics: DMP3056L Series 30 V 4.3 A P-Channel Enhancement Mode Mosfet - SOT-23-3

***ark: MOSFET, P-CH, -30V, -4.3A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50m Ω @ 6A, 10V 4.3A Ta -55°C~150°C TJ MOSFET P-CH 30V 4.3A SOT23

***nell: MOSFET, P-CH, -30V, -4.3A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.1V; Power Dissipation Pd: 1.38W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

Part #	Mfg.	Description	Stock	Price
DMN3070SSN-7 DISTI # V72:2272_06698239	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 4.2A 3-Pin SC-59 T/R RoHS: Compliant	2498	1000:$0.1009 500:$0.1354 250:$0.1368 100:$0.1382 25:$0.2579 10:$0.2605 1:$0.3515
DMN3070SSN-7 DISTI # DMN3070SSN-7DICT-ND	Diodes Incorporated	MOSFET N-CH 30V 4.2A SC59 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5857In Stock	1000:$0.1275 500:$0.1700 100:$0.2479 10:$0.3610 1:$0.4600
DMN3070SSN-7 DISTI # DMN3070SSN-7DIDKR-ND	Diodes Incorporated	MOSFET N-CH 30V 4.2A SC59 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5857In Stock	1000:$0.1275 500:$0.1700 100:$0.2479 10:$0.3610 1:$0.4600
DMN3070SSN-7 DISTI # DMN3070SSN-7DITR-ND	Diodes Incorporated	MOSFET N-CH 30V 4.2A SC59 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.1134
DMN3070SSN-7 DISTI # 30351047	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 4.2A 3-Pin SC-59 T/R RoHS: Compliant	2498	1000:$0.1009 500:$0.1354 250:$0.1368 100:$0.1382 81:$0.2579
DMN3070SSN-7 DISTI # DMN3070SSN-7	Diodes Incorporated	Trans MOSFET N-CH 30V 5.1A 3-Pin SC-59 T/R - Tape and Reel (Alt: DMN3070SSN-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0749 6000:$0.0709 12000:$0.0679 18000:$0.0649 30000:$0.0629
DMN3070SSN-7 DISTI # 70438084	Diodes Incorporated	MOSFET N-channel 30V 4.2A SC59 RoHS: Compliant	0	250:$0.1610 750:$0.1410 1500:$0.1260 3000:$0.1140
DMN3070SSN-7 DISTI # 621-DMN3070SSN-7	Diodes Incorporated	MOSFET 30V N-CH MOSFET RoHS: Compliant	5872	1:$0.3700 10:$0.2770 100:$0.1500 1000:$0.1130 3000:$0.0970
DMN3070SSN-7 DISTI # 7904606	Zetex / Diodes Inc	MOSFET N-CHANNEL 30V 4.2A SC59, PK	750	25:£0.1790 150:£0.1160 750:£0.1100 1500:£0.0950
DMN3070SSN-7 DISTI # 7904606P	Zetex / Diodes Inc	MOSFET N-CHANNEL 30V 4.2A SC59, RL	8700	150:£0.1160 750:£0.1100 1500:£0.0950
DMN3070SSN-7 DISTI # C1S205700479071	Diodes Incorporated	Trans MOSFET N-CH 30V 4.2A 3-Pin SC-59 T/R RoHS: Compliant	2498	250:$0.1368 100:$0.1382 25:$0.2579

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DMN3070SSN-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes