TGS2355

Mfr. #:: TGS2355
Manufacturer:: Qorvo
Description:: RF Switch ICs .5-6GHz SPDT 100 Watt GaN
Lifecycle:: New from this manufacturer.
Datasheet:: TGS2355 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: TGS2355 more Information

Product Attribute
Attribute Value

Manufacturer:: Qorvo

Product Category:: RF Switch ICs

RoHS:: Y

Number of Switches:: Single

Switch Configuration:: SPDT

Operating Frequency:: 0.5 GHz to 6 GHz

Insertion Loss:: 1.3 dB

Off Isolation - Typ:: 40 dB

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Packaging:: Gel Pack

Brand:: Qorvo

High Control Voltage:: - 48 V

Minimum Operating Temperature:: - 55 C

Operating Supply Current:: 1 mA

Pd - Power Dissipation:: 36.8 W

Product Type:: RF Switch ICs

Factory Pack Quantity:: 50

Subcategory:: Wireless & RF Integrated Circuits

Part # Aliases:: 1097157

Tags: TGS2355, TGS235, TGS23, TGS2, TGS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGS2355 Description

***W: RF Switch, SPDT, 0.5 to 6 GHz,1.3 dB IL, 40 dB Isolation, 50 dBm Pwr Handling, DIE, GaN

TGS2355 More Information

TGS2355 High Power GaN Switch: Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch that operates from 0.5 to 6GHz. Developed using Qorvo's 0.25um GaN on SiC production process, TGS2355 handles up to 100W input power with <1dB insertion loss over most of the operating band and greater than 40dB isolation. The TGS2355 is housed in a small 2.14 x 2.50mm die size and requires very little control current. The design enables easy system integration without impacting system power budgets. TGS2355 is ideally suited for high-power switching applications across both defense and commercial applications.Learn More

GaN Switches: Qorvo GaN Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FET's are able to use the same circuit architectures to handle power levels on the order of tens of watts.

Market price

Part #	Mfg.	Description	Stock	Price
TGS2355-SM DISTI # 772-TGS2355-SM	Qorvo	RF Switch ICs .5-6GHz SPDT 100 Watt GaN RoHS: Compliant	9	1:$134.0000 25:$115.0000
TGS2355 DISTI # 772-TGS2355	Qorvo	RF Switch ICs .5-6GHz SPDT 100 Watt GaN RoHS: Compliant	0	50:$89.0000 100:$76.0000
TGS2355-SM_EVAL DISTI # 772-TGS2355-SM_EVAL	Qorvo	Switch Development Tools .5-6GHz Iso >25dB EVAL BOARD RoHS: Compliant	0	1:$1,172.0000

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Availability

Stock:: 50
On Order:: 2033
Enter Quantity:

Current price of TGS2355 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

50: ~~$89.00~~; ~~$4 450.00~~

100: ~~$76.00~~; ~~$7 600.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

TGS2355 3
TGS235 16
TGS23 23
TGS2 61
TGS 247

TGS2355

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes