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CGH40035F

CGH40035F
Mfr. #:
CGH40035F
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGH40035F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGH40035F more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
15 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
4.5 A
Output Power:
45 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440193
Packaging:
Tray
Application:
-
Configuration:
Single
Height:
4.19 mm
Length:
20.46 mm
Operating Frequency:
2 GHz to 4 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
5.97 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Class:
-
Development Kit:
CGH40035F-TB
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
120
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGH40035, CGH4003, CGH400, CGH40, CGH4, CGH
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 35W, RF Power GaN HEMT Flange Package
***i-Key
RF MOSFET HEMT 28V 440193
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGH40035F
DISTI # CGH40035F-ND		WolfspeedRF MOSFET HEMT 28V 440193
RoHS: Compliant
Min Qty: 1
Container: Tray		586In Stock
  • 1:$164.3400
CGH40035F-TB
DISTI # CGH40035F-TB-ND		WolfspeedBOARD DEMO AMP CIRCUIT CGH40035
RoHS: Compliant
Min Qty: 2
Container: Bulk		Temporarily Out of Stock
  • 2:$550.0000
CGH40035F
DISTI # 941-CGH40035F		Cree, Inc.RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt
RoHS: Compliant		120
  • 1:$164.3400
CGH40035F-TB
DISTI # 941-CGH40035F-TB		Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant		1
  • 1:$550.0000
CGH40035FCree, Inc. 20
    CGH40035F
    DISTI # CGH40035F    		WolfspeedRF POWER TRANSISTOR
    RoHS: Compliant    		120
    • 1:$164.3400
    CGH40035F-TB
    DISTI # CGH40035F-TB    		WolfspeedRF TRANSISTOR TEST FIXTURE
    RoHS: Compliant    		2
    • 2:$550.0000
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    Availability
    Stock:
    100
    On Order:
    2083
    Enter Quantity:
    Current price of CGH40035F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $157.06
    $157.06
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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