IPB017N10N5ATMA1

IPB017N10N5ATMA1
Mfr. #:
IPB017N10N5ATMA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB017N10N5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPB017N10N5ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Part-Aliases
IPB017N10N5 SP001227028
Unit-Weight
0.056438 oz
Mounting-Style
SMD/SMT
Package-Case
TO-263-7
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
375 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
27 ns
Rise-Time
23 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuous-Drain-Current
180 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
2.2 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
80 ns
Typical-Turn-On-Delay-Time
33 ns
Qg-Gate-Charge
168 nC
Forward-Transconductance-Min
132 S
Channel-Mode
Enhancement
Tags
IPB017, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 1.7 mOhm 168 nC OptiMOS™ Power Mosfet - D2PAK-7
***ical
Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R
***ark
Mosfet, N-Ch, 100V, 180A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Part # Mfg. Description Stock Price
IPB017N10N5ATMA1
DISTI # V72:2272_06377445
Infineon Technologies AGTrans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R
RoHS: Compliant
460
  • 500:$3.8660
  • 250:$4.2610
  • 100:$4.4800
  • 25:$5.1040
  • 10:$5.1110
  • 1:$5.9180
IPB017N10N5ATMA1
DISTI # IPB017N10N5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4797In Stock
  • 500:$4.5011
  • 100:$5.5586
  • 10:$6.7790
  • 1:$7.5900
IPB017N10N5ATMA1
DISTI # IPB017N10N5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4797In Stock
  • 500:$4.5011
  • 100:$5.5586
  • 10:$6.7790
  • 1:$7.5900
IPB017N10N5ATMA1
DISTI # IPB017N10N5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
4000In Stock
  • 1000:$3.6855
IPB017N10N5ATMA1
DISTI # 31954383
Infineon Technologies AGTrans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R
RoHS: Compliant
460
  • 2:$5.9180
IPB017N10N5ATMA1
DISTI # IPB017N10N5ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB017N10N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.3900
  • 2000:$3.2900
  • 4000:$3.1900
  • 6000:$2.9900
  • 10000:$2.9900
IPB017N10N5ATMA1
DISTI # SP001227028
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: SP001227028)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€3.0900
  • 2000:€2.9900
  • 4000:€2.9900
  • 6000:€2.7900
  • 10000:€2.6900
IPB017N10N5ATMA1
DISTI # 13AC9022
Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes739
  • 500:$4.3800
  • 250:$4.8700
  • 100:$5.1400
  • 50:$5.4000
  • 25:$5.6700
  • 10:$5.9300
  • 1:$6.9700
IPB017N10N5ATMA1
DISTI # 726-IPB017N10N5ATMA1
Infineon Technologies AGMOSFET N-Ch 100V 180A D2PAK-2
RoHS: Compliant
3414
  • 1:$6.3300
  • 10:$5.3800
  • 100:$4.6600
  • 250:$4.4200
  • 500:$3.9700
  • 1000:$3.3500
  • 2000:$3.1800
IPB017N10N5ATMA1
DISTI # 2725835
Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263
RoHS: Compliant
1074
  • 500:£3.1000
  • 250:£3.4500
  • 100:£3.6300
  • 10:£4.2000
  • 1:£4.7200
IPB017N10N5ATMA1
DISTI # 2725835
Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263
RoHS: Compliant
739
  • 500:$7.1300
  • 100:$8.8000
  • 10:$10.7300
  • 1:$12.0200
Image Part # Description
IPB017N10N5LFATMA1

Mfr.#: IPB017N10N5LFATMA1

OMO.#: OMO-IPB017N10N5LFATMA1

MOSFET DIFFERENTIATED MOSFETS
IPB017N10N5ATMA1

Mfr.#: IPB017N10N5ATMA1

OMO.#: OMO-IPB017N10N5ATMA1

MOSFET N-Ch 100V 180A D2PAK-2
IPB017N10N5LFATMA1

Mfr.#: IPB017N10N5LFATMA1

OMO.#: OMO-IPB017N10N5LFATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V D2PAK-7
IPB017N10N5ATMA1

Mfr.#: IPB017N10N5ATMA1

OMO.#: OMO-IPB017N10N5ATMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2
Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of IPB017N10N5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.48
$4.48
10
$4.26
$42.61
100
$4.04
$403.65
500
$3.81
$1 906.15
1000
$3.59
$3 588.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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