SPU02N60S5

SPU02N60S5
Mfr. #:
SPU02N60S5
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5
Lifecycle:
New from this manufacturer.
Datasheet:
SPU02N60S5 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
1.8 A
Rds On - Drain-Source Resistance:
3 Ohms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
7.3 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
25 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Series:
CoolMOS S5
Transistor Type:
1 N-Channel
Width:
2.38 mm
Brand:
Infineon Technologies
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
35 ns
Factory Pack Quantity:
1500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
35 ns
Part # Aliases:
SP000012422 SPU02N60S5BKMA1 SPU2N6S5XK
Unit Weight:
0.139332 oz
Tags
SPU02N60S, SPU02N6, SPU02N, SPU02, SPU0, SPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251
***et Europe
Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 600V 1.8A TO-251
***ronik
N-CH 600V 2A 3000mOhm TO251-3
***ineon
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance
Part # Mfg. Description Stock Price
SPU02N60S5BKMA1
DISTI # SPU02N60S5BKMA1-ND
Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-251
RoHS: Compliant
Min Qty: 1500
Container: Tube
Limited Supply - Call
    SPU02N60S5
    DISTI # SP000012422
    Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R (Alt: SP000012422)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel
    Europe - 1500
    • 1:€0.8299
    • 10:€0.6469
    • 25:€0.5779
    • 50:€0.5259
    • 100:€0.5109
    • 500:€0.4999
    • 1000:€0.4929
    SPU02N60S5BKMA1
    DISTI # SPU02N60S5BKMA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R - Rail/Tube (Alt: SPU02N60S5BKMA1)
    RoHS: Compliant
    Min Qty: 1500
    Container: Tube
    Americas - 0
    • 1500:$0.5449
    • 3000:$0.5259
    • 6000:$0.5069
    • 9000:$0.4899
    • 15000:$0.4809
    SPU02N60S5
    DISTI # 726-SPU02N60S5
    Infineon Technologies AGMOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5
    RoHS: Compliant
    0
    • 1:$1.2500
    • 10:$1.0700
    • 100:$0.8150
    • 500:$0.7200
    • 1000:$0.5690
    SPU02N60S5BKMA1
    DISTI # N/A
    Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      SPU02N60S5Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant
      141
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
      SPU02N60S5XKInfineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      1495
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
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      IGBT Transistors MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5
      SPU02N60S5BKMA1

      Mfr.#: SPU02N60S5BKMA1

      OMO.#: OMO-SPU02N60S5BKMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V 1.8A TO-251
      SPU02N60S5XK

      Mfr.#: SPU02N60S5XK

      OMO.#: OMO-SPU02N60S5XK-1190

      Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of SPU02N60S5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.24
      $1.24
      10
      $1.06
      $10.60
      100
      $0.82
      $81.50
      500
      $0.72
      $360.00
      1000
      $0.57
      $569.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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