2N3906G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

40 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.4 V

Maximum DC Collector Current:

0.2 A

Gain Bandwidth Product fT:

250 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Height:

5.33 mm

Length:

5.2 mm

Packaging:

Bulk

Width:

4.19 mm

Brand:

ON Semiconductor

Continuous Collector Current:

0.2 A

DC Collector/Base Gain hfe Min:

60

Pd - Power Dissipation:

250 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

5000

Subcategory:

Transistors

Tags

2N3906, 2N390, 2N39, 2N3