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IPSA70R360P7SAKMA1

IPSA70R360P7SAKMA1
Mfr. #:
IPSA70R360P7SAKMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPSA70R360P7SAKMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
PG-TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
700 V
Id - Continuous Drain Current:
12.5 A
Rds On - Drain-Source Resistance:
300 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
16.4 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
59.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
1500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
100 ns
Typical Turn-On Delay Time:
19 ns
Part # Aliases:
IPSA70R360P7S SP001664832
Tags
IPSA7, IPSA, IPS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 12.5A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 12.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
Part # Mfg. Description Stock Price
IPSA70R360P7SAKMA1
DISTI # V99:2348_18786383		Infineon Technologies AGCONSUMER1500
  • 1000:$0.4338
  • 500:$0.5385
  • 100:$0.5921
  • 10:$0.7613
  • 1:$0.8688
IPSA70R360P7SAKMA1
DISTI # V36:1790_18786383		Infineon Technologies AGCONSUMER0
    IPSA70R360P7SAKMA1
    DISTI # IPSA70R360P7SAKMA1-ND    		Infineon Technologies AGMOSFET COOLMOS 700V TO251-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		1492In Stock
    • 1000:$0.5428
    • 500:$0.6726
    • 100:$0.8511
    • 10:$1.0620
    • 1:$1.2000
    IPSA70R360P7SAKMA1
    DISTI # 30177701    		Infineon Technologies AGCONSUMER1500
    • 1500:$0.4253
    IPSA70R360P7SAKMA1
    DISTI # 31005162    		Infineon Technologies AGCONSUMER1500
    • 1000:$0.4663
    • 500:$0.5789
    • 100:$0.6365
    • 16:$0.8184
    IPSA70R360P7SAKMA1
    DISTI # IPSA70R360P7SAKMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 12.5A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPSA70R360P7SAKMA1)
    RoHS: Compliant
    Min Qty: 1500
    Container: Tube    		Americas - 0
    • 1500:$0.4249
    • 3000:$0.4089
    • 6000:$0.3939
    • 9000:$0.3809
    • 15000:$0.3739
    IPSA70R360P7SAKMA1
    DISTI # SP001664832    		Infineon Technologies AGTrans MOSFET N-CH 700V 12.5A 3-Pin TO-251 Tube (Alt: SP001664832)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€0.6499
    • 10:€0.5599
    • 25:€0.4759
    • 50:€0.4089
    • 100:€0.4009
    • 500:€0.3939
    • 1000:€0.3879
    IPSA70R360P7SAKMA1
    DISTI # 49AC8008    		Infineon Technologies AGMOSFET, N-CH, 700V, 12.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:12.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes510
    • 1000:$0.4430
    • 500:$0.5610
    • 100:$0.6350
    • 10:$0.8260
    • 1:$0.9600
    IPSA70R360P7SAKMA1
    DISTI # 726-IPSA70R360P7SAKM    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		1231
    • 1:$0.9600
    • 10:$0.8260
    • 100:$0.6350
    • 500:$0.5610
    • 1000:$0.4430
    IPSA70R360P7SAKMA1
    DISTI # 2843151    		Infineon Technologies AGMOSFET, N-CH, 700V, 12.5A, TO-251
    RoHS: Compliant    		510
    • 1000:$0.7230
    • 500:$0.9160
    • 100:$1.1900
    • 5:$1.5000
    IPSA70R360P7SAKMA1
    DISTI # 2843151    		Infineon Technologies AGMOSFET, N-CH, 700V, 12.5A, TO-251
    RoHS: Compliant    		510
    • 500:£0.4370
    • 250:£0.4660
    • 100:£0.4950
    • 25:£0.6430
    • 5:£0.7190
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IPSA70R360P7SAKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.96
    $0.96
    10
    $0.83
    $8.26
    100
    $0.64
    $63.50
    500
    $0.56
    $280.50
    1000
    $0.44
    $443.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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