SSM3J352F,LF

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

S-Mini-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

2 A

Rds On - Drain-Source Resistance:

90 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

5.1 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

600 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Toshiba

Forward Transconductance - Min:

3.8 S

Product Type:

MOSFET

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

54 ns

Typical Turn-On Delay Time:

31 ns

Unit Weight:

0.000423 oz

Tags

SSM3J35, SSM3J3, SSM3J, SSM3, SSM