IS43R16800E-6TLI

Mfr. #:: IS43R16800E-6TLI
Manufacturer:: ISSI
Description:: DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM
Lifecycle:: New from this manufacturer.
Datasheet:: IS43R16800E-6TLI Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IS43R16800E-6TLI more Information

Product Attribute
Attribute Value

Manufacturer: ISSI, Integrated Silicon Solution Inc

Product Category: Memory

Series: IS43R16800E

Type: DDR1

Packaging: Tray Alternate Packaging

Mounting-Style: SMD/SMT

Package-Case: TSOP-66

Operating-Temperature: -40°C ~ 85°C (TA)

Interface: Parallel

Voltage-Supply: 2.3 V ~ 2.7 V

Supplier-Device-Package: 66-TSOP II

Memory-Size: 128M (8M x 16)

Memory-Type: DDR SDRAM

Speed: 166MHz

Access-Time: 6 ns

Format-Memory: RAM

Maximum-Operating-Temperature: + 85 C

Minimum-Operating-Temperature: - 40 C

Organization: 8 M x 16

Supply-Current-Max: 220 mA

Data-Bus-Width: 16 bit

Supply-Voltage-Max: 2.7 V

Supply-Voltage-Min: 2.3 V

Maximum-Clock-Frequency: 166 MHz

Tags: IS43R16800E-6, IS43R16800E, IS43R168, IS43R1, IS43R, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43R16800E-6TLI Ratings and Reviews

E***a

Russia was not tracked. Put it in the mailbox. Not yet checked.

2019-06-15

A***v

Received in a month, with paid delivery (about 50 rubles.) without damage. Capacity corresponds. The capacitors say rubycon. The goods are satisfied.

2019-08-21

M***c

Came very quickly, the goods are normal

2019-06-27

IS43R16800E-6TLI Description

***et: DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II

***ical: DRAM Chip DDR SDRAM 128Mbit 8Mx16 2.5V 66-Pin TSOP-II

***i-Key: IC DRAM 128M PARALLEL 66TSOP II

***ark: Sdram, Ddr, 128Mbit, 2.5V, 66Tsopii

***ment14 APAC: SDRAM, DDR, 128MBIT, 2.5V, 66TSOPII; Memory Type:DRAM - Synchronous; Access Time:6ns; Memory Case Style:TSOPII; No. of Pins:66; IC Interface Type:(Not Applicable); Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-40°C to +85°C

***nell: SDRAM, DDR, 128MBIT, 2,5V, 66TSOPII; Configurazione Memoria DRAM:8M x 16bit; Modello Case Memoria CI:TSOP-II; No. di Pin:66Pin; Tipo di Interfaccia CI:-; Tempo di Accesso:6ns; Formato Pagina:-; Temperatura di Esercizio Min:-40°C; Temperatura di Esercizio Max:85°C; Gamma Prodotti:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017); Intervallo Temperatura di Esercizio:Da -40°C a +85°C; Tipo di Memoria:DRAM

IS43R16800E-6TLI More Information

DDR SDRAM: ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More

IS43R32800D 8Mx32 256-Mbit DDR SDRAM: ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.

Market price

Part #	Mfg.	Description	Stock	Price
IS43R16800E-6TLI DISTI # V99:2348_14073732	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128Mbit 8Mx16 2.5V 66-Pin TSOP-II RoHS: Compliant	108	2500:$3.0230 1000:$3.1830 500:$3.3520 250:$3.4930 100:$3.5360 25:$3.9160 10:$4.0490 1:$4.4310
IS43R16800E-6TLI DISTI # IS43R16800E-6TLI-ND	Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 66TSOP II RoHS: Compliant Min Qty: 432 Container: Tray	Temporarily Out of Stock	432:$2.2793
IS43R16800E-6TLI-TR DISTI # IS43R16800E-6TLI-TR-ND	Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 66TSOP II RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$2.1149
IS43R16800E-6TLI DISTI # 25887365	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128Mbit 8Mx16 2.5V 66-Pin TSOP-II RoHS: Compliant	108	100:$3.1970 25:$3.5130 10:$3.6270 2:$3.9390
IS43R16800E-6TLI DISTI # IS43R16800E-6TLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II - Tape and Reel (Alt: IS43R16800E-6TLI) RoHS: Compliant Min Qty: 432 Container: Reel	Americas - 0	432:$1.8900 648:$1.7900 1080:$1.7900 2160:$1.6900 4320:$1.5900
IS43R16800E-6TLI DISTI # IS43R16800E-6TLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II (Alt: IS43R16800E-6TLI) RoHS: Compliant Min Qty: 1	Europe - 0	1:€3.6900 10:€3.3900 25:€3.1900 50:€3.0900 100:€2.9900 500:€2.8900 1000:€2.6900
IS43R16800E-6TLI-TR DISTI # IS43R16800E-6TLI-TR	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II T/R - Tape and Reel (Alt: IS43R16800E-6TLI-TR) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	1500:$1.8900 3000:$1.7900 6000:$1.7900 9000:$1.6900 15000:$1.5900
IS43R16800E-6TLI-TR DISTI # IS43R16800E-6TLI-TR	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II T/R (Alt: IS43R16800E-6TLI-TR) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0	1500:€3.3900 3000:€3.2900 6000:€3.1900 9000:€2.8900 15000:€2.6900
IS43R16800E-6TLI DISTI # 870-IS43R16800E-6TLI	Integrated Silicon Solution Inc	DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM RoHS: Compliant	315	1:$4.8700 10:$4.4200 25:$4.3000 100:$3.8500 250:$3.8400 500:$3.7000 1000:$3.5200
IS43R16800E-6TLI-TR DISTI # 870-IS43R16800E6TLIT	Integrated Silicon Solution Inc	DRAM 128M (8Mx16) 166MHz DDR 2.5v RoHS: Compliant	0	1500:$1.9900
IS43R16800E6TLI DISTI # C1S328800081183	Integrated Silicon Solution Inc	DRAM Chip RoHS: Compliant	108	100:$3.1970 25:$3.5130 10:$3.6270 1:$4.1400

Image	Part #	Description
	Mfr.#: IS43R16800E-6TL OMO.#: OMO-IS43R16800E-6TL	DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM
	Mfr.#: IS43R16800E-5TLI-TR OMO.#: OMO-IS43R16800E-5TLI-TR	DRAM 128M (8Mx16) 200MHz DDR 2.5v
	Mfr.#: IS43R16800A-5TL-TR OMO.#: OMO-IS43R16800A-5TL-TR	DRAM 128M 2.5v 8Mx16 400MHz
	Mfr.#: IS43R16800E-5TLI-TR OMO.#: OMO-IS43R16800E-5TLI-TR-INTEGRATED-SILICON-SOLUTION	DRAM 128M (8Mx16) 200MHz DDR 2.5v
	Mfr.#: IS43R16800E-6TLI-TR OMO.#: OMO-IS43R16800E-6TLI-TR-INTEGRATED-SILICON-SOLUTION	DRAM 128M (8Mx16) 166MHz DDR 2.5v
	Mfr.#: IS43R16800E-5TL OMO.#: OMO-IS43R16800E-5TL-INTEGRATED-SILICON-SOLUTION	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM
	Mfr.#: IS43R16800E-5TLI OMO.#: OMO-IS43R16800E-5TLI-INTEGRATED-SILICON-SOLUTION	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM
	Mfr.#: IS43R16800A-5TL OMO.#: OMO-IS43R16800A-5TL-1190	New and Original
	Mfr.#: IS43R16800CC-5TL OMO.#: OMO-IS43R16800CC-5TL-230	DRAM 128M (8Mx16) 200MHz DDR 2.5v
	Mfr.#: IS43R16800E-5TLI/TL OMO.#: OMO-IS43R16800E-5TLI-TL-1190	New and Original