SI3552DV-T1-GE3

Mfr. #:: SI3552DV-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR
Lifecycle:: New from this manufacturer.
Datasheet:: SI3552DV-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI3552DV-T1-GE3 Datasheet SI3552DV-T1-GE3 Datasheet (P4-P6)SI3552DV-T1-GE3 Datasheet (P7-P9)SI3552DV-T1-GE3 Datasheet (P10-P12)
ECAD Model:
More Information:: SI3552DV-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSOP-6

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 2.5 A, 1.8 A

Rds On - Drain-Source Resistance:: 105 mOhms, 200 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 3.2 nC, 3.6 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1.15 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Series:: SI3

Transistor Type:: 1 N-Channel, 1 P-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 4.3 S, 2.4 S

Fall Time:: 5 ns, 7 ns

Product Type:: MOSFET

Rise Time:: 9 ns, 12 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 13 ns, 12 ns

Typical Turn-On Delay Time:: 7 ns, 8 ns

Part # Aliases:: SI3552DV-GE3

Unit Weight:: 0.000705 oz

Tags: SI3552DV-T, SI3552D, SI3552, SI355, SI35, SI3

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3552DV-T1-GE3 Ratings and Reviews

I***n

The goods are good, one potentiometer did not fit the nut, the seller returned part of the amount. In general, both the goods and the seller, everything is fine.

2019-06-10

T***i

Thank you

2019-06-05

SI3552DV-T1-GE3 Description

*** Source Electronics: MOSFET N/P-CH 30V 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R

***nell: DUAL N/P CHANNEL MOSFET, 30V, TSOP

***ark: Transistor; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Threshold Voltage, Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Package/Case:6-TSOP; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes

SI3552DV-T1-GE3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Part #	Mfg.	Description	Stock	Price
SI3552DV-T1-GE3 DISTI # V72:2272_09216702	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R RoHS: Compliant	1306	1000:$0.3321 500:$0.4116 250:$0.4544 100:$0.5049 25:$0.5964 10:$0.7288 1:$0.9011
SI3552DV-T1-GE3 DISTI # V36:1790_09216702	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R RoHS: Compliant	0	3000000:$0.2863 1500000:$0.2865 300000:$0.2982 30000:$0.3167 3000:$0.3197
SI3552DV-T1-GE3 DISTI # SI3552DV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9490In Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI3552DV-T1-GE3 DISTI # SI3552DV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9490In Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI3552DV-T1-GE3 DISTI # SI3552DV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.2793 15000:$0.2867 6000:$0.2977 3000:$0.3197
SI3552DV-T1-GE3 DISTI # 31084356	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R RoHS: Compliant	1306	24:$0.9011
SI3552DV-T1-GE3 DISTI # SI3552DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3552DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2689 18000:$0.2759 12000:$0.2839 6000:$0.2959 3000:$0.3049
SI3552DV-T1-GE3 DISTI # SI3552DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R (Alt: SI3552DV-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.3289 500:€0.3349 100:€0.3399 50:€0.3539 25:€0.3829 10:€0.4449 1:€0.6529
SI3552DV-T1-GE3 DISTI # 35R6216	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 30V, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1000:$0.3390 500:$0.4240 250:$0.4690 100:$0.5140 50:$0.5950 25:$0.6770 1:$0.8380
SI3552DV-T1-GE3 DISTI # 35R0049	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 30V, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	50000:$0.2710 30000:$0.2840 20000:$0.3050 10000:$0.3260 5000:$0.3530 1:$0.3620
SI3552DV-T1-GE3 DISTI # 781-SI3552DV-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR RoHS: Compliant	11784	1:$0.8300 10:$0.6690 100:$0.5080 500:$0.4200 1000:$0.3360 3000:$0.3040 6000:$0.2830 9000:$0.2730
SI3552DV-T1-GE3 DISTI # TMOSS6305	Vishay Intertechnologies	N/P-CH 30V 2,5A/-1,8A TSOP6 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.4940 6000:$0.4658 9000:$0.3952 12000:$0.3740
SI3552DV-T1-GE3 DISTI # 1781634	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 30V, TSOP RoHS: Compliant	0	3000:$0.4600 1000:$0.5060 500:$0.6330 100:$0.7670 10:$1.0100
SI3552DV-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR RoHS: Compliant	Americas - 24000	3000:$0.2980 6000:$0.2830 12000:$0.2740 18000:$0.2670

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Availability

Stock:: 11
On Order:: 1994
Enter Quantity:

Current price of SI3552DV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.83~~; ~~$0.83~~

10: ~~$0.67~~; ~~$6.69~~

100: ~~$0.51~~; ~~$50.80~~

500: ~~$0.42~~; ~~$210.00~~

1000: ~~$0.34~~; ~~$336.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

I***n

T***i

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes